Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, we introduce a method to analyze measured capacitance-voltage data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors. We also demonstrate the accurate extraction of the built-in potential (Φbi) and the Schottky barrier height from the measurement data independent of the Richardson constant.
@article{arxiv.2002.10763,
title = {Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes},
author = {Sarah Riazimehr and Melkamu Belete and Satender Kataria and Olof Engström and Max Christian Lemme},
journal= {arXiv preprint arXiv:2002.10763},
year = {2020}
}