Related papers: Delay Analysis of Graphene Field-Effect Transistor…
We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW…
Mechanism of transient population inversion in graphene with multi-splitted (interdigitated) top-gate and grounded back gate is suggested and examined for the mid-infrared (mid-IR) spectral region. Efficient stimulated emission after fast…
Low-frequency noise (LFN) variability in graphene transistors (GFETs) is for the first time researched in this work. LFN from an adequate statistical sample of long-channel solution-gated single-layer GFETs is measured in a wide range of…
We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The…
In recent years, graphene Field-Effect-Transistors (GFETs) have demonstrated an outstanding potential for Terahertz (THz) photodetection due to their fast response and high-sensitivity. Such features are essential to enable emerging THz…
The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the…
The main target of this article is to propose for the first time a physics-based continuous and symmetric compact model that accurately captures IV experimental dependencies induced by geometrical scaling effects for graphene transistor…
We developed means to produce wafer scale, high-quality graphene films as large as 3 inch wafer size on Ni and Cu films under ambient-pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We…
Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of…
Dielectrophoretic (DEP) sensing is an extremely important sensing modality that enables the rapid capture and detection of polarizable particles of nano-scale size. This makes it a versatile tool for applications in medical diagnostics,…
We present a compact physics-based model of the current-voltage characteristics of graphene field-effect transistors, of especial interest for analog and radio-frequency applications where bandgap engineering of graphene could be not…
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are…
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D materials: layer thickness dependent energy bandgap (Eg).…
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively…
Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap…
We study hot carrier transport under magnetic fields up to 15 T in suspended graphitic multilayers through differential conductance (dI/dV) spectroscopy. Distinct high-energy dI/dV anomalies have been observed and shown to be related to…
This letter investigates the bias-dependent low frequency noise of single layer graphene field-effect transistors. Noise measurements have been conducted with electrolyte-gated graphene transistors covering a wide range of gate and drain…
The reliability of analysis is becoming increasingly important as point-of-care diagnostics are transitioning from single analyte detection towards multiplexed multianalyte detection. Multianalyte detection benefits greatly from…
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying…