Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor
Materials Science
2017-08-02 v1 Mesoscale and Nanoscale Physics
Abstract
The influence of edge vacancies on the working ability of the planar graphene tunnel field-effect transistor (TFET) is studied at various concentrations and distributions (normal, uniform, periodic) of defects. All calculations are performed by using the Green's function method and the tight-binding approximation. It is shown that the transistor performance depends critically on two important factors associated with the defects: the destruction of the edge-localized electronic states and the emergence of subpeaks near the Fermi level. The supportable operation conditions of the TFET are found to be ensured at 30 percent or less of edge vacancies regardless of the type of their distribution.
Keywords
Cite
@article{arxiv.1707.00933,
title = {Effect of edge vacancies on performance of planar graphene tunnel field-effect transistor},
author = {A. A. Glebov and V. L. Katkov and V. A. Osipov},
journal= {arXiv preprint arXiv:1707.00933},
year = {2017}
}