Related papers: Fabrication and characterization of pseudo-spin-MO…
The integration of the spin degree of freedom in charge-based electronic devices has revolutionised both sensing and memory capability in microelectronics. Further development in spintronic devices requires electrical manipulation of spin…
We present a theoretical model that describes electrical spin-detection at a ferromagnet/semiconductor interface. We show that the sensitivity of the spin detector has strong bias dependence which, in the general case, is dramatically…
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect,…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
Spintronics has attracted wide attention by promising novel functionalities derived from both the electron charge and spin. While branching into new areas and creating new themes over the past years, the principal goals remain the spin and…
The photon spin is an important resource for quantum information processing as is the electron spin in spintronics. However, for subwavelength confined optical excitations, polarization as a global property of a mode cannot be defined.…
We propose a theoretical model for describing the operation of a transistor with a MoS2 monolayer channel, which allows to obtain an analytical approximation of the potential in the channel. This potential depends on the drain and gate…
Spin accumulation in a paramagnetic semiconductor due to voltage-biased current tunneling from a polarized ferromagnet is experimentally manifest as a small additional spin-dependent resistance. We describe a rigorous model incorporating…
Designing quantum analogous of classical computers components is the heart of quantum information processors. In this sense, for quantum devices, quantum transistors are believed to be as necessary as the classical ones for classical…
Several domains of society will be disrupted once millions of high-quality qubits can be brought together to perform fault-tolerant quantum computing (FTQC). All quantum computing hardware available today is many orders of magnitude removed…
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be…
We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and…
Efficient generation of spin currents from charge currents is of high importance for memory and logic applications of spintronics. In particular, generation of spin currents from charge currents in high spin-orbit coupling metals has the…
A new Schottky-gate Bipolar Mode Field Effect Transistor (SBMFET) is proposed and verified by two-dimensional simulation. Unlike in the case of conventional BMFET, which uses deep diffused p+-regions as the gate, the proposed device uses…
The continuous need for miniaturization and increase in device speed exerts pressureon the electronics industry to explore new avenues of information processing. One possibility is to use the spin to store, manipulate and carry information.…
Magnetic tunnel junction (MTJ) spin torque oscillators (STO) have shown the potential to be used in a wide range of microwave and sensing applications. To evaluate potential uses of MTJ STO technology in various applications, an analytical…
Hardware implementations of the Ising model offer promising solutions to large-scale optimization tasks. In the literature, various nanodevices have been shown to emulate the spin dynamics for such Ising machines with remarkable…
Diodes are key elements for electronics, optics, and detection. The search for a material combination providing the best performances for the required application is continuously ongoing. Here, we present a superconducting spintronic tunnel…