English

Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads

Mesoscale and Nanoscale Physics 2009-11-11 v2 Materials Science
Authors: K. Hamaya , S. Masubuchi , M. Kawamura , T. Machida , M. Jung , K. Shibata , K. Hirakawa , T. Taniyama , S. Ishida , Y. Arakawa
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Abstract

We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.

Keywords

magnetic tunnel junctions spintronics magnetoresistance

Cite

@article{arxiv.cond-mat/0611269,
  title  = {Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads},
  author = {K. Hamaya and S. Masubuchi and M. Kawamura and T. Machida and M. Jung and K. Shibata and K. Hirakawa and T. Taniyama and S. Ishida and Y. Arakawa},
  journal= {arXiv preprint arXiv:cond-mat/0611269},
  year   = {2009}
}

Comments

4 pages, 3 figures

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