Related papers: Fabrication and characterization of pseudo-spin-MO…
We demonstrate a spin diode consisting of a semiconductor free nano-scale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data…
Physical devices exhibiting stochastic functions with low energy consumption and high device density have the potential to enable complex probability-based computing algorithms, accelerate machine learning tasks, and enhance hardware…
Device concepts in semiconductor spintronics make long spin lifetimes desirable, and the requirements put on spin control by schemes of quantum information processing are even more demanding. Unfortunately, due to spin-orbit coupling…
Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
Spin transistors based on a semiconducting channel attached to ferromagnetic electrodes suffer from fast spin decay and extremely low spin injection/detection efficiencies. Here, we propose an alternative all-in-one spin device whose…
The interfacial coupling of two materials with different ordered phases, such as a superconductor (S) and a ferromagnet (F) is driving new fundamental physics and innovative applications. For example, the creation of spin-filter Josephson…
We propose and theoretically investigate spin superconducting qubits. Spin superconducting qubit consists of a single spin confined in a Josephson junction. We show that owing to spin-orbit interaction, superconducting difference across the…
Ferromagnetic semiconductors play a crucial role in spintronic devices, enabling effective control of electron spin over charge. This study explores their unique properties, ongoing advancements in spin control, and potential integration…
An on-chip microwave circulator that is compatible with superconducting devices is a key element for scale-up of superconducting circuits. Previous approaches to integrating circulators on chip involve either external driving that requires…
We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy…
We propose a quantum interference spin-injector nanodevice consisting of a superconductor-normal metal hybrid loop connected to a superconductor-ferromagnet bilayer via a tunneling junction. We show that for certain values of the applied…
The lack of an easily realizable complementary circuit technology offering low static power consumption has been limiting the utilization of other semiconductor materials than silicon. In this publication, a novel depletion mode JFET based…
On the spin-valve-like ferromagnet/spin glass/ferromagnet (FM/SG/FM) structure, the tunneling current is dominated by resistance switch (RS) instead of the local density of states according to the conventional tunneling theory. Here we show…
Spin textures such as magnetic domain walls and skyrmions have the potential to revolutionize electronic devices by encoding information bits. Although recent advancements in ferromagnetic films have led to promising device prototypes,…
Recent advances in quantum error correction (QEC) codes for fault-tolerant quantum computing \cite{Terhal2015} and physical realizations of high-fidelity qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014,…
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in…
A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor…
We propose a new class of non-uniform superlattice magnetic tunnel junctions (Nu-SLTJs) with the Linear, Gaussian, Lorentzian, and P\"oschl-teller width and height based profiles manifesting a sizable enhancement in the TMR($\approx…