Related papers: Fabrication and characterization of pseudo-spin-MO…
Spin injection efficiency based on conventional ferromagnet (or half-metallic ferromagnet) /semiconductor is greatly limited by the Schmidt obstacle due to conductivity mismatch, here we proposed that by replacing the metallic injectors…
The continuous development of superconducting electronics is encouraging several studies on hybrid Josephson junctions (JJs) based on superconductor/ferromagnet/superconductor (SFS) heterostructures, as either spintronic devices or…
We present a theoretical study of the quasiparticle and subgap conductance of generic $X/I_{sf}/S_{M}$ junction with a spin-filter barrier $I_{sf}$, where $X$ is either a normal $N$ or a ferromagnetic metal $F$ and $S_{M}$ is a…
Superparamagnetic tunnel junctions (SMTJs) have emerged as a competitive, realistic nanotechnology to support novel forms of stochastic computation in CMOS-compatible platforms. One of their applications is to generate random bitstreams…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
In a mesoscopic superconductor - normal metal - superconductor (SNS) heterostructure the quasiparticle distribution can be driven far from equilibrium by a voltage applied across the normal metal. This reduces the supercurrent between the…
Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…
Dynamics of a ferromagnetic macrospin (e.g., a free layer of a magnetic tunnel junction (MTJ)) can be described in terms of equivalent capacitor charge $Q$ and inductor flux $\Phi$, in a manner similar to a standard electric LC circuit, but…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
Approaching a two-component tip made of a superconductor (S) and a ferromagnet (F) from a magnetic sample allows for two distinct tunneling processes between the ferromagnets, through S: i) Charge and spin are conserved; ii) Charge and spin…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
Electron spin qubits in semiconductors are attractive from the viewpoint of long coherence times. However, single spin measurement is challenging. Several promising schemes incorporate ancillary tunnel couplings that may provide unwanted…
We have developed and optimized two categories of spin transfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance (TMR) ratio, low critical current, high outputpower in the micro watt range, and…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
The effect of spin-disorder scattering on perpendicular transport in a magnetic monolayer is considered within the single-site Coherent Potential Approximation (CPA). The exchange interaction between a conduction electron and localized…
This letter presents fabrication and characterization of an optimized SQUIPT (superconducting quantum interference proximity transistor). The present device, characterized with reduced tunnel junction area and shortened normal-metal…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
Injecting spins into a semiconductor channel and transforming the spin information into a significant electrical output signal is a long standing problem in spintronics. Actually, this is the prerequisite of several concepts of spin…
Spin-polarized transport is investigated in normal metal-superconductor (NS) junctions as a function of interface transmissivity as well as temperature when the density of states of a superconductor is Zeeman-split in response to an…
Spin transfer torque oscillators (STOs) based on magnetic tunnel junction (MTJ) devices are emerging as a possible replacement for complementary metal-oxide semiconductors for radio-frequency (RF) signal generation. Advantages include low…