Related papers: Fabrication and characterization of pseudo-spin-MO…
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and…
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…
We introduce the concept of a probabilistic or p-bit, intermediate between the standard bits of digital electronics and the emerging q-bits of quantum computing. We show that low barrier magnets or LBM's provide a natural physical…
We report on the experimental investigation of an individual pseudomolecule using trapped ions with adjustable magnetically induced J-type coupling between spin states. Resonances of individual spins are well separated and are addressed…
Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor…
We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…
This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel…
We experimentally demonstrate a Si spin metal-oxide-semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source-drain current and spin signals at room temperature. The spin channel is non-degenerate n-type Si,…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
Magnetic $p$-$n$ junction diodes are fabricated to investigate spin-polarized electron transport. The injection of spin-polarized electrons in a semiconductor is achieved by driving a current from a ferromagnetic injector (Fe), into a bulk…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
A superconductor with a spin-split excitation spectrum behaves as an ideal ferromagnetic spin-injector in a tunneling junction. It was theoretical predicted that the combination of two such spin-split superconductors with independently…
The electron spin is emerging as a new powerful tool in the electronics and optics industries. Many proposed applications involve the creation of spin currents, which so far have proven to be difficult to produce in semiconductor…
This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical…
This paper provides a tutorial overview over recent vigorous efforts to develop computing systems based on spin waves instead of charges and voltages. Spin-wave computing can be considered as a subfield of spintronics, which uses magnetic…
Ongoing semiconductor scaling challenges and the rise of neuromorphic computing have sparked interest in exploring novel computing schemes to achieve higher power efficiency and computational capabilities. Probabilistic computing is one…
We propose the idea of a "spinguide", i.e. the semiconductor channel which is surrounded with walls from the diluted magnetic semiconductor (DMS) with the giant Zeeman splitting which are transparent for electrons with the one spin…
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from a nonmagnetic semiconductors (S) into ferromagnet (FM)…
In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current…