相关论文: Direct optical excitation of a fullerene-incarcera…
This study presents a method for deterministic Er3+ doping of x-cut TFLN using focused ion beam (FIB) implantation with sub-100 nm spatial precision, enabling seamless integration of active rare-earth ions into this technologically relevant…
The probability that photoionization of the caged atom in an endohedral system is accompanied by excitation of the fullerene shell is shown to be close to unity in broad intervals of the photoelectron energies. The result is obtained by…
Systems exhibiting both spin and orbital degrees of freedom, of which Er3+ is one, can offer mechanisms for manipulating and measuring spin states via optical excitations. Motivated by the possibility of observing photoluminescence and…
We have observed that C$_{60}^+$ ions isolated in cryogenic matrixes show pronounced near-IR photoluminescence upon excitation in the near-IR range. By contrast UV photoexcitation does not lead to measurable luminescence. After the recent…
Photoionization of the Ce$^{3+}$ - Ce$^{4+}$ process has been studied using the random phase approximation with exchange method in the energy region 100-150 eV. Comparison of our results with the recent measurement [M\"uller {\it et al},…
We present an effective ab initio method to calculate the crystal field coefficients of an erbium (Er3+) ion experiencing different local site symmetries in several wide-band-gap oxides, and then evaluate crystal field splittings of these…
Colour centres hosted in solid-state materials such as silicon carbide and diamond are promising candidates for integration into chip-scale quantum systems. Specifically, the incorporation of these colour centres within photonic integrated…
As an active material with favorable linear and nonlinear optical properties, thin-film lithium niobate has demonstrated its potential in integrated photonics. Integration with rare-earth ions, which are promising candidates for quantum…
Silicon films doped with Er and O were prepared by techniques of physical vapor deposition on crystalline silicon, ion beam mixing and oxygen incorporation through Ar+ and O2+ implantation, and thermal annealing. Processing steps were…
We report a significant enhancement of room-temperature photoluminescence from trivalent erbium-doped (Er3+) silicon nitride (Si3N4) metasurfaces at the telecommunication wavelength prepared via ion implantation. The metasurfaces,…
Prior studies have shown that photoluminescence from Er3+ impurities in silicon is severely limited at room temperature by non-radiative relaxation and solid solubility; and room temperature emission from Er3+ in oxide-based hosts becomes…
The effect of magnetron power on the room temperature 1.54 $\mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon…
We suggest an explanation of the recently observed discrepancy between the experimental and theoretical results on ionization of atoms, encapsulated into the fullerenes by photons with the energies of about 80-190eV. On the ground of…
The enhancement of Er$^{3+}$-based up-conversion for photovoltaics in multilayer porous silicon photonic structures is considered theoretically and experimentally. Transfer matrix simulations are used to assess the increased photonic…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…
We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These mechanisms, resonant excitation via the higher-lying inner 4f…
Organic-inorganic metal halide perovskite devices have generated significant interest for LED, photodetector, and solar cell applications due to their attractive optoelectronic properties and substrate-choice flexibility1-4. These devices…
Erbium (Er) ions are the gain medium of choice for fiber-based amplifiers and lasers, offering a long excited-state lifetime, slow gain relaxation, low amplification nonlinearity and noise, and temperature stability compared to…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
We report an interference experiment of spontaneous emission of light from two distant solid-state ensembles of atoms that are coherently excited by a short laser pulse. The ensembles are Erbium ions doped into two LiNbO3 crystals with…