相关论文: Modeling Single Electron Transfer in Si:P Double Q…

Understanding charge transport in semiconductor quantum dot (QD) assemblies is important for developing the next generation of solar cells and light-harvesting devices based on QD technology. One of the key factors that governs the…

The possibility of quantum computing with spins in germanium nanoscale transistors has recently attracted interest since it promises highly tuneable qubits that have encouraging coherence times. We here present the first complete theory of…

Monolayer Transition Metal Dichalcogenides (TMDCs) are promising candidates for quantum technologies, such as quantum dots, because they are truly two-dimensional semiconductors with a direct band gap. In this work, we analyse theoretically…

Two-dimensional (2D) semiconductors are likely to dominate next-generation electronics due to their advantages in compactness and low power consumption. However, challenges such as high contact resistance and inefficient doping hinder their…

The manuscript theoretically discusses various important aspects for donor atom based single qubit operations in silicon (Si) quantum computer architecture at room temperature using a single nitrogen (N) deep-donor close to the Si/SiO2…

We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the…

Studying quantum properties in solid-state systems is a significant avenue for research. In this scenario, double quantum dots (DQDs) appear as a versatile platform for technological breakthroughs in quantum computation and nanotechnology.…

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the…

We study single-electron transport through a double quantum dot (DQD) monitored by a capacitively coupled quantum point-contact (QPC) electrometer. We derive the full counting statistics for the coupled DQD - QPC system and obtain the joint…

We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…

Quantum coherence in solid-state systems has been demonstrated in superconducting circuits and in semiconductor quantum dots. This has paved the way to investigate solid-state systems for quantum information processing with the potential…

We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation…

We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to…

Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent…

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts…

We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM).…

Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the…

We study theoretically the quantum dynamics of an electron in the singlyionized double-donor structure in the semiconductor host under the influence of laser pulses whose frequencies are close to structure resonant frequencies. This system…

Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a…

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel…