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Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a…

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…

介观与纳米尺度物理 · 物理学 2015-06-29 D. M. Zajac , T. M. Hazard , X. Mi , K. Wang , J. R. Petta

We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We find the…

介观与纳米尺度物理 · 物理学 2016-07-01 Yu E. Wang , Archana Tankasala , Lloyd C. L. Hollenberg , Gerhard Klimeck , Michelle Y. Simmons , Rajib Rahman

We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown.…

介观与纳米尺度物理 · 物理学 2022-09-05 A. A. Lasek , C. H. W. Barnes , T. Ferrus

The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and…

介观与纳米尺度物理 · 物理学 2007-06-13 M. J. Calderon , Belita Koiller , S. Das Sarma

Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…

介观与纳米尺度物理 · 物理学 2015-04-07 M. Fernando Gonzalez-Zalba , André Saraiva , Dominik Heiss , Maria J. Calderón , Belita Koiller , Andrew J. Ferguson

Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger…

In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a…

介观与纳米尺度物理 · 物理学 2024-02-26 Zach D. Merino , Bohdan Khromets , Jonathan Baugh

We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…

量子物理 · 物理学 2015-05-19 Enrico Prati , Matteo Belli , Simone Cocco , Guido Petretto , Marco Fanciulli

A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically-defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we…

介观与纳米尺度物理 · 物理学 2016-08-03 Mykhailo Klymenko , Michael Klein , Raphael Levine , Francoise Remacle

Double-slit experiments inferring the phase and the amplitude of the transmission coefficient performed at quantum dots (QD), in the Coulomb blockade regime, present anomalies at the phase changes depending on the number of electrons…

介观与纳米尺度物理 · 物理学 2013-05-21 A. I. Mese , A. Bilekkaya , S. Arslan , S. Aktas , A. Siddiki

We show that the coherence of charge transfer through a weakly coupled double-dot dimer can be determined by analyzing the statistics of the conductance pattern, and does not require large phase coherence length in the host material. We…

介观与纳米尺度物理 · 物理学 2015-06-24 L. P. Rokhinson , L. J. Guo , S. Y. Chou , D. C. Tsui , E. Eisenberg , R. Berkovits , B. L. Altshuler

We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD.…

介观与纳米尺度物理 · 物理学 2015-05-19 A. Rossi , T. Ferrus , G. J. Podd , D. A. Williams

Recent innovations in fabricating nanoscale confined spin systems have enabled investigation of fundamental quantum correlations between single quanta of photons and matter states. Realization of quantum state transfer from photon…

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part to another. For example, in a quantum computer[1] decoherence and circuit complexity…

介观与纳米尺度物理 · 物理学 2011-11-02 R. P. G. McNeil , M. Kataoka , C. J. B. Ford , C. H. W. Barnes , D. Anderson , G. A. C. Jones , I. Farrer , D. A. Ritchie

In this Letter, we present a physical scheme for implementing the discrete quantum Fourier transform in a coupled semiconductor double quantum dot system. The main controlled-R gate operation can be decomposed into many simple and feasible…

量子物理 · 物理学 2009-11-13 Ping Dong , Ming Yang , Zhuo-Liang Cao

Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…

材料科学 · 物理学 2009-11-10 Belita Koiller , R. B. Capaz , X. Hu , S. Das Sarma

Spins of donor electrons and nuclei in silicon are promising quantum bit (qubit) candidates which combine long coherence times with the fabrication finesse of the silicon nanotechnology industry. We outline a potentially scalable spin qubit…

介观与纳米尺度物理 · 物理学 2021-07-27 T. Schenkel , C. C. Lo , C. D. Weis , J. Bokor , A. M. Tyryshkin , S. A. Lyon

We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely…

材料科学 · 物理学 2007-05-23 Belita Koiller , Xuedong Hu , S. Das Sarma