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We investigate the physics of the core reconstruction and associated structural excitations (reconstruction defects and kinks) of dislocations in silicon, using a linear-scaling density-matrix technique. The two predominant dislocations…

材料科学 · 物理学 2009-10-30 R. W. Nunes , J. Bennetto , David Vanderbilt

Theoretical calculations of the structure, formation and migration of kinks on a non-dissociated screw dislocation in silicon have been carried out using density functional theory calculations as well as calculations based on interatomic…

We compare the models that have been proposed in the literature for the atomic structure of the 90-degree partial dislocation in the homopolar semiconductors, silicon, diamond, and germanium. In particular, we examine the traditional…

材料科学 · 物理学 2009-10-31 R. W. Nunes , David Vanderbilt

Atomic-scale calculations for the dynamics of the 90$^0$ partial glide dislocation in silicon are made using the effective-medium tight-binding theory. Kink formation and migration energies for the reconstructed partial dislocation are…

材料科学 · 物理学 2008-02-03 K. Stokbro , L. B. Hansen , B. I. Lundqvist

Based on ab initio calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near the…

材料科学 · 物理学 2009-10-31 Gabor Csanyi , Sohrab Ismail-Beigi , T. A. Arias

The dynamics of amorphous silicon at low temperatures can be characterized by a sequence of discrete activated events, through which the topological network is locally reorganized. Using the activation-relaxation technique, we create more…

凝聚态物理 · 物理学 2009-10-31 G. T. Barkema , Normand Mousseau

We suggest that the commonly-accepted core structure of the 90-degree partial dislocation in Si may not be correct, and propose instead a period-doubled structure. We present LDA, tight-binding, and classical Keating-model calculations, all…

材料科学 · 物理学 2009-10-30 J. Bennetto , R. W. Nunes , David Vanderbilt

Based on {\em ab initio} calculation, we propose a new structure for the fundamental excitation of the reconstructed 30$^\circ$ partial dislocation in silicon. This soliton has a rare structure involving a five-fold coordinated atom near…

材料科学 · 物理学 2009-10-31 Gabor Csanyi , Torkel D. Engeness , Sohrab Ismail-Beigi , T. A. Arias

We report an unexpected characteristic of dislocation cores in silicon. Using first-principles calculations, we show that all the stable core configurations for a non-dissociated 60$^\circ$ dislocation are sessile. The only glissile…

材料科学 · 物理学 2015-05-14 Laurent Pizzagalli , Julien Godet , Sandrine Brochard

Isolated kinks on thermally fluctuating (1/2)<111> screw, <100> edge and (1/2)<111> edge dislocations in bcc iron are simulated under zero stress conditions using molecular dynamics (MD). Kinks are seen to perform stochastic motion in a…

材料科学 · 物理学 2013-02-26 T. D. Swinburne , S. L. Dudarev , S. P. Fitzgerald , M. R. Gilbert , A. P. Sutton

Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions,…

材料科学 · 物理学 2023-06-06 Jinwon Lee , Jae Whan Park , Gil-Young Cho , Han Woong Yeom

The annealing kinetics of mobile intrinsic defects is investigated by an ab initio method based on density functional theory. The interstitial-vacancy recombination, the diffusion of vacancies and interstitials to defect sinks (e.g.…

材料科学 · 物理学 2007-05-23 Michel Bockstedte , Alexander Mattausch , Oleg Pankratov

Dislocations, as topological defects in crystal lattices, are fundamental to understanding plasticity in materials. Similar periodic structures also arise in continuum field theories, such as chiral soliton lattices (CSLs), which appear in…

高能物理 - 理论 · 物理学 2025-06-23 Minoru Eto , Kentaro Nishimura , Muneto Nitta

At low temperatures, dynamics in amorphous silicon occurs through a sequence of discrete activated events that locally reorganize the topological network. Using the activation-relaxation technique, a data base containing over 8000 such…

无序系统与神经网络 · 物理学 2009-10-31 Normand Mousseau , G. T. Barkema

We study the dynamic electrical response of a silicon-molecular monolayer-metal junctions and we observe two contributions in the admittance spectroscopy data. These contributions are related to dipolar relaxation and molecular organization…

介观与纳米尺度物理 · 物理学 2010-07-27 Nicolas Clement , Stephane Pleutin , David Guerin , Dominique Vuillaume

Disclinations, first observed in mesomorphic phases, are relevant to a number of ill-ordered condensed matter media, with continuous symmetries or frustrated order. They also appear in polycrystals at the edges of grain boundaries. They are…

软凝聚态物质 · 物理学 2009-11-13 Maurice Kleman , Jacques Friedel

Large-scale atomistic calculations, using empirical potentials for modeling semiconductors, have been performed on a stressed system with linear surface defects like steps. Although the elastic limits of systems with surface defects remain…

材料科学 · 物理学 2007-09-12 Julien Godet , Laurent Pizzagalli , Sandrine Brochard , Pierre Beauchamp

We present a numerical study of the process of the kink-antikink collisions in the coupled one-dimensional two-component $\phi^4$ model. Our results reveal two different soliton solutions which represent double kink configuration and…

高能物理 - 理论 · 物理学 2013-05-30 A. Halavanau , T. Romanczukiewicz , Ya. Shnir

Analysis is given of the changes of dislocation motion modes with stress and temperature variation. Different regimes of dislocation kink pair formation and spreading (motion in the random potential, in the field of random forces, the…

材料科学 · 物理学 2007-05-23 Yu. L. Iunin , V. I. Nikitenko

Numerical simulation of the dislocation motion in 2D Frenkel - Kontorova (FK) model in the thermostat shows an unusual dynamical behavior. It appears that ''kink'' regime of dislocation gliding takes place in a certain region of parameters…

材料科学 · 物理学 2009-10-31 Yu. N. Gornostyrev , M. I. Katsnelson , A. V. Kravtsov , A. V. Trefilov
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