相关论文: Conductance distribution between Hall plateaus
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
We have measured the complex conductivity $\sigma_{xx}$ of a two-dimensional electron system in the quantum Hall regime up to frequencies of 6 GHz at electron temperatures below 100 mK. Using both its imaginary and real part we show that…
We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…
The Hall conductivity of disordered magnetic systems consisting of hard-core point vortices randomly dropped on the plane with a Poissonian distribution, has a behavior analogous to the one observed experimentally by R.~J.~Haug,…
We have studied transport properties in a two-dimensional electron gas with equal Rashba and Dresselhaus spin-orbit interactions under a perpendicular magnetic field. By employing the exact solution for this system, we found resonant charge…
In order to investigate whether space coordinates are intrinsically noncommutative, we make use of the Hall effect on the two-dimensional plane. We calculate the Hall conductivity in such a way that the noncommutative U(1) gauge invariance…
Gate-controllable two dimensional systems with in-plane modulation of properties could serve as highly tunable effective media. Intuitively, such systems may bring novel functionality provided that the period of the lateral modulation is…
We investigated the magnetic field dependence of the Hall and the bend resistances in the ballistic regime for a single layer graphene Hall bar structure containing a pn-junction. When both regions are n-type the Hall resistance dominates…
We measure the Hall conductivity of a two-dimensional electron gas formed at a GaAs/AlGaAs heterojunction in the terahertz regime close to the cyclotron resonance frequency by employing a highly sensitive Faraday rotation method coupled…
We measure the conductance of a quantum point contact (QPC) while the biased tip of a scanning probe microscope induces a depleted region in the electron gas underneath. At finite magnetic field we find plateaus in the real-space maps of…
We have investigated the Hall resistance $R_H$ near the plateau-insulator transition of a two-dimensional electron gas in the quantum critical regime. High-field magnetotransport data taken on a low-mobility InGaAs/InP heterostructure with…
Two-component conductors -- e.g., semi-metals and narrow band semiconductors -- often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise…
We have performed a metrological characterization of the quantum Hall resistance in a 1 $\mu$m wide graphene Hall-bar. The longitudinal resistivity in the center of the $\nu=\pm 2$ quantum Hall plateaus vanishes within the measurement noise…
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large…
We report transport measurements in a single edge channel of an InAs/GaSb quantum spin Hall insulator, where the conduction occurs through only one pair of counterpropagating edge modes. By using a specific sample design involving highly…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…
We report on the stability of the quantum Hall plateau in wide Hall bars made from a chemically gated graphene film grown on SiC. The $\nu=2$ quantized plateau appears from fields $B \simeq 5$ T and persists up to $B \simeq 80$ T. At high…
We report systematic quantum Hall transport experiments on Fabry-Perot electron interferometers at ultra-low-temperatures. The GaAs/AlGaAs heterostructure devices consist of two constrictions defined by etch trenches in 2D electron layer,…
The quantum Hall and longitudinal resistances in multi-terminal ferromagnetic graphene p-n junctions under a perpendicular magnetic field are investigated. In the Hall measurements, the transverse contacts are assumed to be located at p-n…
Hall effect is an important phenomenon when a magnetic field is applied to materials. From the curve depicting the Hall resistance versus the magnetic field, crucial information such as carrier concentration can be extracted. If the curve…