相关论文: A few electrons per ion scenario for the B=0 metal…
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
Experimental results on the metal-insulator transition and related phenomena in strongly interacting two-dimensional electron systems are discussed. Special attention is given to recent results for the strongly enhanced spin susceptibility,…
In a recent Letter, Kravchenko et al. [cond-mat/9608101] have provided evidence for a metal-insulator transition (MIT) in a two-dimensional electron system (2DES) in Si metal-oxide-semiconductor field-effect transistors (MOSFETs). The…
A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…
The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…
We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
In recent years systematic experimental studies of the temperature dependence of the resistivity in a variety of dilute, ultra clean two dimensional electron/hole systems have revived the fundamental question of localization or,…
A two-dimensional gas of non-interacting quasiparticles in a nearly periodic potential is considered at zero temperature. The potential is a superposition of a periodic potential, induced by the charge density wave of a Wigner crystal, and…
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the…
The influence of Coulomb interaction on transport properties of spinless electrons in small disordered two dimensional systems is studied within a tight binding model. Spatial correlations, inverse participation ratio, and multifractal…
In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…
This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics…
The problem of noninteracting electrons in the presence of annealed magnetic disorder, in addition to nonmagnetic quenched disorder, is considered. It is shown that the proper physical interpretation of this model is one of electrons…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
For about twenty years, it has been the prevailing view that there can be no metallic state or metal-insulator transition in two dimensions in zero magnetic field. In the last several years, however, unusual behavior suggestive of such a…
The non-linear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
It is shown that recent experiments indicating a metal-insulator transition in 2D electron systems can be interpreted in terms of a simple model, in which the resistivity is controlled by scattering at charged hole traps located in the…