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相关论文: Orbital Magnetoresistance in the LaSrCuO System

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The effect of zinc doping on the anomalous temperature dependence of the magnetoresistance and the Hall effect in the normal state was studied in a series of La{1.85}Sr{0.15}Cu{1-y}Zn{y}O{4} films, with values of y between zero and 0.12.…

凝聚态物理 · 物理学 2007-05-23 A. Malinowski , A. Krickser , Marta Z. Cieplak , S. Guha , K. Karpinska , M. Berkowski , P. Lindenfeld

We measure the temperature dependence of the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in c-axis oriented epitaxial thin films of La(0.8)Sr(0.2)MnO(3), for different current directions relative to the crystal…

材料科学 · 物理学 2015-05-13 Y. Bason , J. Hoffman , C. H. Ahn , L. Klein

The longitudinal electrical resistivity and the transverse Hall resistivity of CeFeAsO are simultaneously measured up to a magnetic field of 45T using the facilities of pulsed magnetic field at Los Alamos. Distinct behaviour is observed in…

超导电性 · 物理学 2011-05-17 H. Q. Yuan , L. Jiao , J. Singleton , F. F. Balakirev , G. F. Chen , J. L. Luo , N. L. Wang

The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x < 0.05 has been studied in the temperature range 1.6 K to 100 K, and in magnetic fields up to 14 T, parallel and perpendicular to the CuO2 planes. The behavior of the…

超导电性 · 物理学 2009-11-10 Marta Z. Cieplak , A. Malinowski , S. Guha , M. Berkowski

Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong…

超导电性 · 物理学 2009-11-13 Peng Cheng , Huan Yang , Ying Jia , Lei Fang , Xiyu Zhu , Gang Mu , Hai-Hu Wen

We have epitaxially grown c-axis oriented SrxLa1-xCuO2 thin films by rf sputtering on KTaO3 substrates with x = 0.12. The as-grown deposits are insulating and a series of superconducting films with various Tc(R=0) up to 26 K have been…

超导电性 · 物理学 2009-11-13 V. Jovanovic , Z. Z. Li , F. Bouquet , L. Fruchter , H. Raffy

By using a two-step method, we successfully synthesized the iron based new superconductor LaO$_{0.9}$F$_{0.1-x}$FeAs. The Hall effect and magnetoresistance were measured in wide temperature region. A negative Hall coefficient R_H has been…

超导电性 · 物理学 2008-09-08 Huan Yang , Xiyu Zhu , Lei Fang , Gang Mu , Hai-Hu Wen

We have measured the longitudinal resistivity and the Hall resistivity in the ab-plane of highly c-axis-oriented MgB2 thin films. In the normal state, the Hall coefficient (R_H) behaves as R_H ~ T with increasing temperature (T) up to 130 K…

超导电性 · 物理学 2009-11-07 W. N. Kang , Hyeong-Jin Kim , Eun-Mi Choi , Heon Jung Kim , Kijoon H. P. Kim , H. S. Lee , Sung-Ik Lee

Measurements of magnetization, specific heat, electrical resistivity, Hall effect, and magnetoresistance on single crystalline samples of LaFeAsO grown in a NaAs flux are reported. While this material is known to be a semimetal, the…

超导电性 · 物理学 2015-06-16 C. A. McElroy , J. J. Hamlin , B. D. White , M. A. McGuire , B. C. Sales , M. B. Maple

We observe an unusual behavior of the spin Hall magnetoresistance (SMR) measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, which is a tensile-strained LaCoO3 (LCO) thin film with the Curie temperature Tc=85K. The SMR…

We find that the Hall effect resistivity ($\rho_{xy}$) of thin films of \lsmo\ varies as a function of the angle $\theta$ between the applied magnetic field and the film normal as $\rho_{xy}=a\cos \theta + b\cos 3\theta$, where $|b|$…

强关联电子 · 物理学 2015-06-12 Netanel Naftalis , Noam Haham , Jason Hoffman , Matthew S. J. Marshall , C. H. Ahn , Lior Klein

Magnetoresistance (MR) in the out-of-plane resistivity $\rho_c$ for the normal state of the one-layer high-quality Bi_2Sr_2CuO_x single crystals under various dc magnetic fields up to 28 T over the temperature region 6-100 K has been…

超导电性 · 物理学 2007-05-23 S. I. Vedeneev , A. G. M. Jansen , B. A. Volkov , P. Wyder

SrRuO3 is an itinerant ferromagnet and in its thin film form when grown on miscut SrTiO3 it has Tc of ~ 150 K and strong uniaxial anisotropy. We measured both the Hall effect and the magnetoresistance (MR) of the films as a function of the…

材料科学 · 物理学 2011-06-15 Isaschar Genish , Yevgeny Kats , Lior Klein , James W. Reiner , M. R. Beasley

Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+{\delta}} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content ({\delta}) were studied…

We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ in two samples of $p$-Si/SiGe/Si with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The research was…

介观与纳米尺度物理 · 物理学 2015-05-13 I. L. Drichko , I. Yu. Smirnov , A. V. Suslov , O. A. Mironov , D. R. Leadley

The normal-state Hall coefficient R_H and the in-plane resistivity \rho_{ab} are measured in La-doped Bi_{2}Sr_{2}CuO_{y} (T_c \simeq 13 K) single crystals and La_{2-x}Sr_{x}CuO_{4} thin films by suppressing superconductivity with 61-T…

We report the results of a study of the Hall effect and magnetoresistance in single crystals of Sr2RuO4 in which Sr^(2+) has been substituted by La^(3+) (Sr(2-y)La(y)RuO(4)) or Ru^(4+) by Ti^(4+) (Sr(2)Ru(1-x)Ti(x)O(4)). For undoped…

强关联电子 · 物理学 2009-11-10 N. Kikugawa , A. P. Mackenzie , C. Bergemann , Y. Maeno

The Hall resistivity rho_{xy} of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal has been measured as a function of temperature and field. The overall behavior is similar to that observed previously in thin-films. At 5 K, rho_{xy} is positive…

强关联电子 · 物理学 2009-10-31 S. H. Chun , M. B. Salamon , P. D. Han

The Hall resistivity, magnetoresistance, and magnetization of La_{1-x}Ca_{x}CoO_{3} epitaxial films with x between 0.25 and 0.4 grown on lanthanum aluminate were measured in fields up to 7 T. The x=1/3 film, shows a reentrant metal…

强关联电子 · 物理学 2009-11-07 S. A. Baily , M. B. Salamon

We have determined the magnetoresistance of RuO_2-based resistors (Scientific Instruments RO-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T. The magnetoresistance is negative around 0.5 T and then becomes positive at larger…

无序系统与神经网络 · 物理学 2015-06-24 Michio Watanabe , Masashi Morishita , Youiti Ootuka
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