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相关论文: The Mott-Anderson transition in the disordered one…

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The one-dimensional SU$(n)$ Hubbard model is investigated numerically for $n=2,3,4$, and 5 at half filling and $1/n$ filling using the density-matrix renormalization-group (DMRG) method. The energy gaps and various quantum information…

强关联电子 · 物理学 2015-06-25 K. Buchta , Ö. Legeza , E. Szirmai , J. Sólyom

We study the thermodynamics of the one-dimensional extended Hubbard model at half-filling using a density-matrix renormalization group method applied to transfer matrices. We show that the various phase transitions in this system can be…

强关联电子 · 物理学 2007-11-04 S. Glocke , A. Klümper , J. Sirker

The magnetic properties and Mott transition of the half-filled Hubbard model on the 1/5 depleted square lattice with frustration is studied at zero temperature by the variational cluster approximation. The $(\pi,\pi)$ N\'eel ordering (AF)…

强关联电子 · 物理学 2015-06-22 Atsushi Yamada

We propose a multi-band Fermi-Bose Hubbard model with on-site fermion-boson conversion and general filling factor in three dimensions. Such a Hamiltonian models an atomic Fermi gas trapped in a lattice potential and subject to a Feshbach…

其他凝聚态物理 · 物理学 2009-11-11 L. D. Carr , M. J. Holland

Combined effects of interactions and disorder are investigated using a finite temperature quantum Monte Carlo technique for the three-dimensional Hubbard model with random potentials of a finite range. Temperature dependence of the charge…

强关联电子 · 物理学 2009-10-31 Y. Otsuka , Y. Hatsugai

We study the low-energy asymptotics of the half-filled Hubbard model with a circular Fermi surface in $d=1+\epsilon$ continuous dimensions, based on the one-loop renormalization-group (RG) method. Peculiarity of the $d=1+\epsilon$…

强关联电子 · 物理学 2009-10-31 Jun-ichiro Kishine

We study quantum phase transitions by measuring the bond energy, the number density, and the half-chain entanglement entropy in the one-dimensional ionic Hubbard model. By performing the infinite density matrix renormalization group with…

强关联电子 · 物理学 2021-02-24 Myung-Hoon Chung

We study the effect of disorder on the semimetal -- Mott insulator transition in the half-filled repulsive Hubbard model on a honeycomb lattice, a system that features vanishing density of states at the Fermi level. Using the determinant…

强关联电子 · 物理学 2018-03-22 Tianxing Ma , Lufeng Zhang , Chia-Chen Chang , Hsiang-Hsuan Hung , Richard T. Scalettar

We analyze the Thermodynamic Bethe Ansatz equations of the one-dimensional half-filled Hubbard model in the "spin-disordered regime", which is characterized by the temperature being much larger than the magnetic energy scale but small…

强关联电子 · 物理学 2009-11-11 S. Ejima , F. H. L. Essler , F. Gebhard

We study the ground state phase diagram of the Anderson-Hubbard model with correlated hopping at half filling in one-dimension. The Hamiltonian has a local Coulomb repulsion $U$ and a disorder potential with local energies randomly…

强关联电子 · 物理学 2017-07-19 Francesca Battista , Alberto Camjayi , Liliana Arrachea

We study the one-dimensional Hubbard model for two-component fermions with infinitely strong on-site repulsion (t-0 model) in the presence of disorder. Our analytical treatment demonstrates that the type of disorder drastically changes the…

无序系统与神经网络 · 物理学 2023-07-11 D. V. Kurlov , M. S. Bahovadinov , S. I. Matveenko , A. K. Fedorov , V. Gritsev , B. L. Altshuler , G. V. Shlyapnikov

Using quantum field theory and bosonization, we determine the quantum phase diagram of the one-dimensional Hubbard model with bond-charge interaction $X$ in addition to the usual Coulomb repulsion $U$ at half-filling, for small values of…

强关联电子 · 物理学 2010-11-30 A. O. Dobry , A. A. Aligia

We study the Mott transition in a frustrated Hubbard model with next-nearest neighbor hopping at half-filling. The interplay between interaction, dimensionality and geometric frustration closes the one-dimensional Mott gap and gives rise to…

强关联电子 · 物理学 2012-09-19 Marcin Raczkowski , Fakher F. Assaad

We use the two-step density-matrix renormalization group method to elucidate the long-standing issue of the universality class of the Mott transition in the Hubbard model in two dimensions. We studied a spatially anisotropic two-dimensional…

强关联电子 · 物理学 2015-06-05 S. Moukouri , Eitan Eidelstein

The density-matrix renormalization group is used to study the phase diagram of the one-dimensional half-filled Hubbard model with on-site (U) and nearest-neighbor (V) repulsion, and hopping t. A critical line V_c(U) approximately equal to…

强关联电子 · 物理学 2009-11-07 Eric Jeckelmann

We consider the extended Hubbard model on a two-dimensional square lattice at half-filling. The model is investigated using the strong coupling diagram technique. We sum infinite series of ladder diagrams allowing for full-scale charge and…

强关联电子 · 物理学 2023-05-22 A. Sherman

We present a $T=0K$ renormalization group (RG) phase diagram for the electronic Hubbard model in two dimensions on the square lattice at, and away from, half filling. The RG procedure treats quantum fluctuations in the single particle…

强关联电子 · 物理学 2020-06-24 Anirban Mukherjee , Siddhartha Lal

We apply Density Matrix Renormalization Group methods to study the phase diagram of the quantum ANNNI model in the region of low frustration where the ferromagnetic coupling is larger than the next-nearest-neighbor antiferromagnetic one. By…

统计力学 · 物理学 2010-11-05 Matteo Beccaria , Massimo Campostrini , Alessandra Feo

We study the phase diagram of a one-dimensional extended Hubbard model with antiferromagnetic exchange interaction analytically and numerically. The bosonization and transfer-matrix renormalization group methods are used in the…

强关联电子 · 物理学 2009-11-10 Jianhui Dai , Xiaoyong Feng , Tao Xiang , Yue Yu

We examine the phase diagram of the half-filled one-dimensional extended Hubbard model using quantum information entropies within the density-matrix renormalization group. It is well known that there is a charge-density-wave phase at large…

强关联电子 · 物理学 2015-05-13 C. Mund , O. Legeza , R. M. Noack
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