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相关论文: Mott-Hubbard insulators for systems with orbital d…

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We study the Hubbard model with bond-charge interaction (`correlated hopping') in terms of the Gutzwiller wave function. We show how to express the Gutzwiller expectation value of the bond-charge interaction in terms of the correlated…

强关联电子 · 物理学 2009-10-31 M. Kollar , D. Vollhardt

We study the hopping conduction in a composite made of straight metallic nanowires randomly and isotropically suspended in an insulator. Uncontrolled donors and acceptors in the insulator lead to random charging of wires and hence finite…

无序系统与神经网络 · 物理学 2007-05-23 Tao Hu , B. I. Shklovskii

We consider variants of the Jaynes-Cummings-Hubbard model of lattice polaritons, taking into account next-nearest-neighbor, diagonal and long-range photon hopping in one and two dimensions. These models are relevant for potential…

强关联电子 · 物理学 2012-01-10 M. Hohenadler , M. Aichhorn , L. Pollet , S. Schmidt

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

Ground state properties of multi-orbital Hubbard models are investigated by the auxiliary field quantum Monte Carlo method. A Monte Carlo technique generalized to the multi-orbital systems is introduced and examined in detail. The algorithm…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

We study a model of a covalent band insulator with on-site Coulomb repulsion at half-filling using dynamical mean-field theory. Upon increasing the interaction strength the system undergoes a discontinuous transition from a correlated band…

强关联电子 · 物理学 2009-10-16 Michael Sentef , Jan Kunes , Philipp Werner , Arno P. Kampf

The possibility of "orbitally selective Mott transitions" within a multiband Hubbard model, in which one orbital with large on-site electron-electron repulsion $U_1$ is insulating and another orbital, to which it is hybridized, with small…

强关联电子 · 物理学 2022-09-15 Yuxi Zhang , Chunhan Feng , Rubem Mondaini , George G. Batrouni , Richard T. Scalettar

In the previous papers (Journ. of Phys. Stud. 2, 362 (1998); cond-mat/9811213) we have studied metal-insulator transition in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. The present paper is…

强关联电子 · 物理学 2007-05-23 Leonid Didukh , Vasyl Hankevych

We obtain the quantum phase diagram of the ionic Hubbard model including electron-hole symmetric density-dependent hopping. The boundaries of the phases are determined by crossing of excited levels with particular discrete symmetries, which…

强关联电子 · 物理学 2023-04-11 P. Roura Bas , A. A. Aligia

We study the non-degenerate one dimensional two-orbital Hubbard model with interorbital Coulomb interaction. By means of the density-matrix renormalization group technique, we calculate the local single-particle density of states and the…

强关联电子 · 物理学 2024-10-14 N. Aucar Boidi , A. P. Kampf , K. Hallberg

The dynamical mean-field theory is employed to study the orbital-selective Mott transition (OSMT) of the two-orbital Hubbard model with nearest neighbor hopping and next-nearest neighbor (NNN) hopping. The NNN hopping breaks the…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Yun Song

We investigate a multi-orbital extension of the periodic Anderson model with particular emphasis on electron correlations including orbital fluctuations. By means of a linearized version of the dynamical mean-field theory, we compute the…

强关联电子 · 物理学 2009-11-10 Ryota Sato , Takuma Ohashi , Akihisa Koga , Norio Kawakami

The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…

强关联电子 · 物理学 2007-05-23 F. Mancini

Multiorbital interactions have the capacity to produce an interesting kind of doublon-holon bound state that consists of a single-hole state in one band and a doubly-occupied state in another band. Interband doublon-holon pair excitations…

强关联电子 · 物理学 2019-09-04 Yuekun Niu , Jian Sun , Yu Ni , Jingyi Liu , Yun Song , Shiping Feng

The effect of on-site electron-electron repulsion $U$ in a band insulator is explored for a bilayer Hubbard Hamiltonian with opposite sign hopping in the two sheets. The ground state phase diagram is determined at half-filling in the plane…

强关联电子 · 物理学 2013-04-09 Axel Euverte , Simone Chiesa , Richard . T. Scalettar , George G. Batrouni

Most available theories for correlated electron transport are based on the Hubbard Hamiltonian. In this effective theory, renormalized hopping and interaction parameters only implicitly incorporate the coupling of correlated charge carriers…

We study the ground state phase diagram of the Anderson-Hubbard model with correlated hopping at half filling in one-dimension. The Hamiltonian has a local Coulomb repulsion $U$ and a disorder potential with local energies randomly…

强关联电子 · 物理学 2017-07-19 Francesca Battista , Alberto Camjayi , Liliana Arrachea

Roles of Coulomb interaction, orbital degeneracy and Jahn-Teller coupling in double-exchange models are examined for Mn perovskite oxides. We study the undoped Mott insulator as well as metal-insulator transitions by hole doping, and…

强关联电子 · 物理学 2009-10-31 Yukitoshi Motome , Masatoshi Imada

Orbital Kondo effect is treated in a model, where additional to the conduction band there are localized orbitals close to the Fermi energy. If the hopping between the conduction band and the localized heavy orbitals depends on the…

凝聚态物理 · 物理学 2009-10-22 K. Penc , A. Zawadowski

We extend to charge and bond operators the transformation that maps the ionic Hubbard model at half filling onto an effective spin Hamiltonian. Using these operators we calculate the amplitude of the charge density wave in different…

强关联电子 · 物理学 2009-11-10 A. A. Aligia