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相关论文: Activated resistivities in the integer quantum Hal…

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A two-dimensional quantum Hall system is studied for a wide class of potentials including single-body random potentials and repulsive electron-electron interactions. We assume that there exists a non-zero excitation gap above the ground…

介观与纳米尺度物理 · 物理学 2007-05-23 Tohru Koma

We investigate the relation between the diagonal ($\sigma_{xx}$) and off-diagonal ($\sigma_{xy}$) components of the conductivity tensor in the quantum Hall system. We calculate the conductivity components for a short-range impurity…

介观与纳米尺度物理 · 物理学 2009-08-06 Akira Endo , Naomichi Hatano , Hiroaki Nakamura , Ryoen Shirasaki

We present a direct numerical evidence for reflection symmetry of longitudinal resistivity $\rho_{xx}$ and quantized Hall resistivity $\rho_{xy}$ near the transition between $\nu=1$ quantum Hall state and insulator, in accord with the…

介观与纳米尺度物理 · 物理学 2009-10-31 D. N. Sheng , Z. Y. Weng

We reexamine the charge transport induced by a weak electric field in two-dimensional quantum Hall systems in a finite, periodic box at very low temperatures. The resulting linear response coefficients consist of the time-independent term…

数学物理 · 物理学 2007-05-23 Tohru Koma

We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of…

介观与纳米尺度物理 · 物理学 2009-10-31 F. Hohls , U. Zeitler , R. J. Haug , K. Pierz

We study thermoelectric transport properties of fractional quantum Hall systems based on exact diagonalization calculation. Based on the relation between thermoelectric response and thermal entropy, we demonstrate that thermoelectric Hall…

介观与纳米尺度物理 · 物理学 2020-07-01 D. N. Sheng , Liang Fu

We have performed low-temperature transport experiments on a Si/SiGe hole system. The measured transverse and longitudinal condductivities $\sigma_{xx}$ and $\sigma_{xy}$ allow us to study the magnetic-field-induced transitions in the…

介观与纳米尺度物理 · 物理学 2007-05-23 C. T. Liang , C. F. Huang , Yu-Ming Cheng , Tsai-Yu Huang , Y. H. Chang , Y. F. Chen

We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the…

凝聚态物理 · 物理学 2007-05-23 S. V. Kravchenko , Whitney Mason , J. E. Furneaux , J. M. Caulfield , J. Singleton , V. M. Pudalov

We calculate the Hall conductivity $\sig_{xy}$ and resistivity $\rho_{xy}$ of a granular system at large tunneling conductance $g_{T}\gg 1$. We show that in the absence of Coulomb interaction the Hall resistivity depends neither on the…

介观与纳米尺度物理 · 物理学 2007-09-25 M. Yu. Kharitonov , K. B. Efetov

We study the effect of random offset charges in the insulator to conductor transition in systems of capacitively coupled grains, as realized in two-dimensional arrays of ultrasmall Josephson junctions. In presence of disorder, the…

无序系统与神经网络 · 物理学 2009-10-31 Enzo Granato , J. M. Kosterlitz

It is shown that the statements about the observation of the transitions between the insulating phase and the integer quantum Hall effect phases with the quantized Hall conductivity $\sigma_{xy}^{q}$ $\geq 3e^{2}/h$ made in a number of…

介观与纳米尺度物理 · 物理学 2015-05-18 S. S. Murzin

The Hall conductivity $\sigma_{\rm xy}$ of a two-dimensional electron system is quantized in units of $e^2/h$ when the Fermi level is located in the mobility gap between two Landau levels. We consider the deviation of $\sigma_{\rm xy}$ from…

凝聚态物理 · 物理学 2009-10-22 M. M. Fogler , B. I. Shklovskii

We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…

材料科学 · 物理学 2010-07-14 P. Mitra , N. Kumar , N. Samarth

We analyze here the behavior of the Hall conductivity $\sigma_{xy}$ near a $z=2$ insulator-superconductor quantum critical point in a perpendicular magnetic field. We show that the form of the conductivity is sensitive to the presence of…

超导电性 · 物理学 2009-11-07 Denis Dalidovich , Philip Phillips

We study quantum Hall systems (mainly the integer case) at finite temperatures and show that there is a novel temperature dependence even for a pure system, thanks to the `anomalous' nature of generators of translation. The deviation of…

凝聚态物理 · 物理学 2007-05-23 Sudhansu S. Mandal , S. Ramaswamy , V. Ravishankar

The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…

材料科学 · 物理学 2015-03-17 D. Chiba , A. Werpachowska , M. Endo , Y. Nishitani , F. Matsukura , T. Dietl , H. Ohno

Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of…

介观与纳米尺度物理 · 物理学 2020-09-30 Shu-Wei Wang , Di Xiao , Ziwei Dou , Moda Cao , Yi-Fan Zhao , Nitin Samarth , Cui-Zu Chang , Malcolm R. Connolly , Charles G. Smith

We discuss the temperature dependence of the Hall conductivity $\sigma_{xy}$ in the magnetic-field-induced spin-density-wave (FISDW) state of the quasi-one-dimensional Bechgaard salts (TMTSF)_2X. Electronic thermal excitations across the…

介观与纳米尺度物理 · 物理学 2009-02-25 Victor M. Yakovenko , Hsi-Sheng Goan , Jonghwa Eom , Woowon Kang

For the fractional quantum Hall states on a finite disc, we study the thermoelectric transport properties under the influence of an edge and its reconstruction. In a recent study on a torus [Phys. Rev. B 101, 241101 (2020)], Sheng and Fu…

强关联电子 · 物理学 2021-06-30 Zi-Yi Fang , Dan Ye , Yu-Yu Zhang , Zi-Xiang Hu

We have investigated temperature dependence of the longitudinal conductivity $\sigma_{xx}$ at integer filling factors $\nu =i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level…

介观与纳米尺度物理 · 物理学 2009-11-10 I. Shlimak , V. Ginodman , M. Levin , M. Potemski , D. K. Maude , K. -J. Friedland , D. J. Paul
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