相关论文: Hall Resistivity in Ferromagnetic Manganese-Oxide …
We study the influence of the thickness Df of the plain ferromagnetic (F) film on the electrical resistance of the flux-coupled hybrids, consisting of superconducting (S) Al film and multilayer [Co/Pt] F film with out-of-plain…
Thickness dependence and strain effects in films of $La_{1-x}A_xMnO_3$ perovskites are analyzed in the colossal magnetoresistance regime. The calculations are based on a generalization of a variational approach previously proposed for the…
We investigated the transport properties under magnetic fields of up to 9 T for FeSe$_{1-x}$Te$_x$ thin films on CaF$_2$. Measurements of the temperature dependence of the electrical resistivity revealed that for $x = 0.2 - 0.4$, where…
Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to…
We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…
We use magnetic force microscopy (MFM) to study spatial uniformity of magnetization of epitaxially grown MnBi2Te4 thin films. Compared to films which exhibit no quantum anomalous Hall effect (QAH), films with QAH are observed to have more…
We report the temperature($T$) and perpendicular magnetic field($B$) dependence of the Hall resistivity $\rho_{xy}(B)$ of dilute metallic two-dimensional(2D) holes in GaAs over a broad range of temperature(0.02-1.25K). The low $B$ Hall…
We study the stability of Hall MHD with strong magnetic fields in which Landau quantization of electrons is important. We find that the strong-field Hall modes can be destabilized by the dependence of the differential magnetic…
The origin of the resistivity minimum observed in strongly phase separated manganites has been investigated in single crystalline thin films of LPCMO (x~0.42, y~0.40). The antiferromagnetic/charge ordered insulator (AFM/COI)-ferromagnetic…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
We have studied temperature dependence of both diagonal and Hall resistivity in the vicinity of $\nu=1/2$. Magnetoresistance was found to be positive and almost independent of temperature: temperature enters resistivity as a logarithmic…
The Hall effect is one of the most fundamental but elusive phenomena in condensed matter physics due to the rich variety of underlying mechanisms. Here we report an exceptionally large Hall effect in a frustrated magnet GdCu$_2$ with high…
The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above…
The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR)…
The observation of dissipationless anomalous Hall current is one of the experimental evidences to confirm the intrinsic origin of anomalous Hall effect. To study the origin of anomalous Hall effect in iron, Fe$_{100-x}$(SiO$_{2}$)$_{x}$…
Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a…
We report on giant positive magnetoresistance effect observed in VOx thin films, epitaxially grown on SrTiO3 substrate. The MR effect depends strongly on temperature and oxygen content and is anisotropic. At low temperatures its magnitude…
We measure magnetic field dependence of the Hall angle in a metallic ferromagnetic nanomagnet with stable local magnetic moments where the adopted mechanisms of Hall effect predict linear plus a constant dependence on the external field…
The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of…
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we…