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相关论文: Dynamical Mean Field Theory for Perovskites

200 篇论文

A theoretical study of [001] "double exchange" superlattices is presented. The superlattice is defined in terms of an $AB$O$_3$ perovskite crystal. Itinerant electrons hop among the B sites according to a nearest-neighbor tight binding…

强关联电子 · 物理学 2009-11-11 Chungwei Lin , Satoshi Okamoto , Andrew J. Millis

We investigate the effect of diagonal disorder on bosons in an optical lattice described by an Anderson-Hubbard model at zero temperature. It is known that within Gutzwiller mean-field theory spatially resolved calculations suffer…

无序系统与神经网络 · 物理学 2009-06-30 U. Bissbort , W. Hofstetter

We develop a cluster dynamical mean field theory of the periodic Anderson model in three dimensions, taking a cluster of two sites as a basic reference frame. The mean field theory displays the basic features of the Doniach phase diagram: a…

强关联电子 · 物理学 2009-11-13 Lorenzo De Leo , Marcello Civelli , Gabriel Kotliar

The last few decades has seen the rapid growth of interest in the bulk perovskite-type transition metal oxides SrVO$_3$ and SrTiO$_3$. The electronic configuration of these perovskites differs by one electron associated to the transition…

强关联电子 · 物理学 2023-09-04 A. D. N. James , M. Aichhorn , J. Laverock

The correlation-driven transition from a paramagnetic metal to a paramagnetic Mott-Hubbard insulator is studied within the half-filled Hubbard model for a thin-film geometry. We consider simple-cubic films with different low-index surfaces…

强关联电子 · 物理学 2009-10-31 M. Potthoff , W. Nolting

Doping change and distortion effect on the double-exchange ferromagnetism are studied within a simplified double-exchange model. The presence of distortion is modelled by introducing the Falicov-Kimball interaction between itinerant…

强关联电子 · 物理学 2007-05-23 Phan Van-Nham , Tran Minh-Tien

Dynamical Mean-Field Theory (DMFT) has opened new perspectives for the investigation of strongly correlated electron systems and greatly improved our understanding of correlation effects in models and materials. In contrast to…

强关联电子 · 物理学 2020-07-16 Dieter Vollhardt

Several puzzling aspects of interplay of the experimental lattice distortion and the the magnetic properties of four narrow $t_{2g}$-band perovskite oxides (YTiO$_3$, LaTiO$_3$, YVO$_3$, and LaVO$_3$) are clarified using results of…

强关联电子 · 物理学 2007-05-23 I. V. Solovyev

We discuss recent results obtained for the Hamiltonian Mean Field model. The model describes a system of N fully-coupled particles in one dimension and shows a second-order phase transition from a clustered phase to a homogeneous one when…

统计力学 · 物理学 2009-10-31 V. Latora , A. Rapisarda , S. Ruffo

The evolution from an anomalous metallic phase to a Mott insulator within the two-dimensional Hubbard model is investigated by means of the Cellular Dynamical Mean-Field Theory. We show that the density-driven Mott metal-insulator…

强关联电子 · 物理学 2007-08-15 M. Civelli , M. Capone , S. S. Kancharla , O. Parcollet , G. Kotliar

We investigate the magnetic quantum phase-transitions in bulk correlated metals at the level of dynamical mean-field theory. To this end, we focus on the Hubbard model on a simple cubic lattice as a function of temperature and electronic…

强关联电子 · 物理学 2024-09-09 S. Adler , D. R. Fus , M. O. Malcolms , A. Vock , K. Held , A. A. Katanin , T. Schäfer , A. Toschi

We solve the Dynamical Mean Field Theory equations for the Hubbard model away from the particle-hole symmetric case using the Density Matrix Renormalization Group method. We focus our study on the region of strong interactions and finite…

强关联电子 · 物理学 2007-05-23 D. J. Garcia , E. Miranda , K. Hallberg , M. J. Rozenberg

We present a percolation theory for the high-$T_c$ oxides pseudogap and $T_c$ dependence on the hole level. The doping dependent inhomogeneous charge structure is modeled by a distribution which may represent the stripe morphology and yield…

超导电性 · 物理学 2007-05-23 E. V. L. de Mello , E. S. Caixeiro , J. L. Gonzaléz

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

We represent here the full description of all asymptotic regimes of conductivity behavior in the so-called "Geometric Strong Magnetic Field limit" in the 3D single crystal normal metals with topologically complicated Fermi surfaces. In…

统计力学 · 物理学 2015-06-24 A. Ya. Maltsev , S. P. Novikov

A new slave-spin representation of fermion operators has recently been proposed for the half-filled Hubbard model. We show that with the addition of a gauge variable, the formalism can be extended to finite doping. The resulting spin…

强关联电子 · 物理学 2011-01-04 S. R. Hassan , L. de' Medici

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

We present a lattice field theory of spins coupled to Dirac fermions, as a model for the doped copper oxide compounds. Both the fermionic and spin degrees of freedom are treated dynamically. The influence of the charge carriers on the…

超导电性 · 物理学 2007-05-23 J. L. Alonso , Ph. Boucaud , V. Martin-Mayor , A. J. van der Sijs

We present a review of our recent work in extending the successful dynamical mean-field theory from the equilibrium case to nonequilibrium cases. In particular, we focus on the problem of turning on a spatially uniform, but possibly time…

强关联电子 · 物理学 2008-08-14 V. Turkowski , J. K. Freericks

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others…

强关联电子 · 物理学 2016-01-12 Yilin Wang , Li Huang , Liang Du , Xi Dai