相关论文: Re-entrant resonant tunneling
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature $T$, carrier density $n$, and the applied perpendicular magnetic field $B$. In zero magnetic field the equilibrium resonant…
We study electron transport through single-electron spin-valve transistors in the presence of non-local exchange between the ferromagnetic leads and the central normal-metal island. The Coulomb interaction is described with the orthodox…
We obtain and analyze the effect of electron-electron Coulomb interaction on the time dependent current flowing through a mesoscopic system connected to biased semi-infinite leads. We assume the contact is gradually switched on in time and…
We report electronic transport experiments on a graphene single electron transistor. The device consists of a graphene island connected to source and drain electrodes via two narrow graphene constrictions. It is electrostatically tunable by…
We consider resonant tunneling of electromagnetic waves through an optical barrier formed by dielectric layers with the frequency dispersion of their dielectric permiability. The frequency region between lower and upper polariton branches…
For quantum ballistic transport of electrons through a short conduction channel, the role of Coulomb interaction may significantly modify the energy levels of an electron pair at low temperatures as the channel becomes wide. In this regime,…
We argue that the tunneling between two 2D electron gases in a weak magnetic field is of resonance character, and involves a long lifetime excitonic state of an electron and hole {\it uniformly spread} over cyclotron orbits. We find that…
We report on non-linear magneto-tunneling experiments carried out in single GaAs vertical quantum dots. We show that conduction at low voltage bias can be a spectroscopic tool for both the ground state and first excited states of few…
Recently, Dial et al. presented measurements of the tunneling density of states into the bulk of a two dimensional electron gas under strong magnetic fields. Several high energy features appear in the measured spectrum showing a distinct…
We study the subgap transport properties of a small capacitance normal metal-superconductor tunnel junction coupled to an external electromagnetic environment. Mesoscopic interference between the electrons in the normal metal strongly…
Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…
The tunneling current between independently contacted graphene sheets separated by boron nitride insulator is calculated. Both dissipative tunneling transitions, with momentum transfer due to disorder scattering, and non-dissipative regime…
We show that randomness of the electron wave functions in a quantum dot contributes to the fluctuations of the positions of the conductance peaks. This contribution grows with the conductance of the junctions connecting the dot to the…
The mutual influence of two layers with strongly loclized electrons is exercised through the random Coulomb shifts of site energies in one layer caused by electron hops in the other layer. We trace how these shifts give rise to a voltage…
Cotunneling current through a resonant level coupled to either normal and superconducting or to two superconducting leads is studied for the domain of bias voltages, V, exceeding the superconducting gap, 2\Delta. Due to the on-site…
We consider theoretically a $1D$-semiconducting wire with strong Rashba interaction in proximity with $s$-wave superconductor, driven into topological phase by external magnetic field. Additionally, we take into account on-site Coulomb…
We report measurements of mesoscopic fluctuations of elastic cotunneling in Coulomb blockaded quantum dots. Unlike resonant tunneling on Coulomb peaks, cotunneling in the valleys is sensitive to charging effects. We observe a larger…
Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic field or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the…
We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated…