相关论文: An Electrostatic Model of Split-Gate Quantum Wires

Modulation-doped GaAs v-groove quantum wires (QWRs) have been fabricated with novel electrical contacts made to two-dimensional electron-gas (2DEG) reservoirs. Here, we present longitudinal photocurrent (photoconductivity/PC) spectroscopy…

Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic…

Considering the increasing number of experimental results in the manufacturing process of quantum dots with different geometries, and the fact that most numerical methods that can be used to investigate quantum dots with non-trivial…

We analyze spectral properties of a leaky wire model with a potential bias. It describes a two-dimensional quantum particle exposed to a potential consisting of two parts. One is an attractive $\delta$-interaction supported by a…

We demonstrate a 36$\times$36 gate electrode crossbar that supports 648 narrow-channel field effect transistors (FET) for gate-defined quantum dots, with a quadratic increase in quantum dot count upon a linear increase in control lines. The…

We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic…

In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well. Each $\delta$-layer is…

We provide a quantitative description of the structure of edge states in split-gate quantum wires in the integer quantum Hall regime. We develop an effective numerical approach based on the Green's function technique for the self-consistent…

We present a theoretical investigation of the electronic and optical properties of V- and T-shaped quantum wires. Valence band mixing as well as realistic sample geometries are fully included through an accurate and efficient approach that…

We investigate the propagation of a piezoelectric surface acoustic wave (SAW) across a GaAs/Al$_X$Ga$_{1-X}$As heterostructure surface, on which there is fixed a metallic split-gate. Our method is based on a finite element formulation of…

We theoretically investigated the readout process of a spin--qubit structure based on a gate-all-around (GAA) transistor. Our study focuses on a logical qubit composed of two physical qubits. Different spin configurations result in…

As an ensemble scheme of solid-state NMR quantum computers the extension of Kane's many-qubits silicon scheme based on the array of 31 P donor atoms are spaced lengthwise of the strip gates is considered. The possible planar topology of…

Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic…

We present in this work a simple Quantum Well (QW) structure consisting of GaAs wells with AlGaAs barriers as a probe for measuring the performance of arsine purifiers within a MetalOrganic Vapour Phase Epitaxy system. Comparisons between…

We propose and study systems of coupled atomic wires in a perpendicular synthetic magnetic field as a platform to realize exotic phases of quantum matter. This includes (fractional) quantum Hall states in arrays of many wires inspired by…

Electron spins in semiconductor devices are highly promising building blocks for quantum processors (QPs). Commercial semiconductor foundries can create QPs using the same processes employed for conventional chips, once the QP design is…

We present a first-principles study of a coherent relationship between the optimized geometry and conductance of a three-aluminum-atom wire during its elongation process. Our simulation employs the most definite model including…

Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the…

Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively…

GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation…