相关论文: An Electrostatic Model of Split-Gate Quantum Wires
Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral…
Increasing the separation between semiconductor quantum dots offers scaling advantages by fa- cilitating gate routing and the integration of sensors and charge reservoirs. Elongated quantum dots have been utilized for this purpose in GaAs…
We describe in detail a set of ideas for implementing qubits, quantum gates and quantum gate networks in a semiconductor heterostructure device. Our proposal is based on an extension of the technology used for surface acoustic wave (SAW)…
We leverage quantum graph theory to quickly and accurately characterise acoustic metamaterials comprising networks of interconnected pipes. Anisotropic bond lengths are incorporated in the model that correspond to space-coiled acoustic…
Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can…
We calculate the quantum states of regular polygons made of 1D quantum wires treating each polygon vertex as a scatterer. The vertex scattering matrix is analytically obtained from the model of a circular bend of a given angle of a 2D…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
Advances in quantum technologies are often limited by slow device characterization, complex tuning requirements, and scalability challenges. Spin qubits in electrostatically defined quantum dots provide a promising platform but are not…
We explore electron transport properties in a quantum wire attached to two metallic electrodes. A simple tight-binding model is used to describe the system and the coupling of the wire to the electrodes (source and drain) is treated through…
The many-body wave-function of an interacting one-dimensional electron system is probed, focusing on the low-density, strong interaction regime. The properties of the wave-function are determined using tunneling between two long, clean,…
We present an analysis of gated InGaAs/InAlAs heterostructures, a device platform to realize spinorbitronic functionalities in semiconductors. The phenomenological model deduced from our magnetotransport experiments allows us to correlate…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
We report the realization of nanotube-based quantum dot structures that use local electrostatic gating to produce individually controllable dots in series along a nanotube. Electrostatic top-gates produce depletion regions in the underlying…
We present evidence for spin-charge separation in the tunneling spectrum of a system consisting of two quantum wires connected by a long narrow tunnel junction at the edge of a GaAs/AlGaAs bilayer heterostructure. Multiple excitation…
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework…
A dense phase of GaAs wires forms in the early stages of strained growth on GaP,assembling from elongated Stranski-Krastanow islands. The electron diffraction during growth is consistent with long, faceted GaAs islands that are…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
Quantum information processing is expressed using quantum bits (qubits) and quantum gates which are arranged in the terms of quantum circuits. Here, each qubit is associated to a quantum circuit wire which is used to conduct the desired…
Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer such wires, critical challenges…
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…