相关论文: Submonolayer Epitaxy Without A Critical Nucleus

We present a unified model of compound semiconductor growth based on kinetic Monte Carlo simulations in tandem with new experimental results that can describe and predict the mechanisms for the formation of various types of nanostructures…

Quantum dots have promising properties for optoelectronic applications. They can be grown free of dislocations in highly mismatched epitaxy in the coherent Stranski-Krastanov mode. In this chapter, some thermodynamic aspects related to the…

We study the morphological evolution of strained heteroepitaxial films using kinetic Monte Carlo simulations in two dimensions. A novel Green's function approach, analogous to boundary integral methods, is used to calculate elastic energies…

This work describes morphological and crystalline properties of the InAs islands grown on templates created by focused ion beam (FIB) on indium phosphide (InP) substrates. Regular arrangements of shallow holes are created on the InP (001)…

We introduce an off-lattice model with continuous particle distances and pair-potential interactions which allows for the efficient simulation of strained heteroepitaxial growth by means of kinetic Monte Carlo (KMC) simulations. We discuss…

Simulations of irreversible growth of extended (fractal and square) islands with critical island sizes i=1 and 2 are performed in broad ranges of coverage \theta and diffusion-to-deposition ratios R in order to investigate scaling of island…

We study the nucleation of GaN islands grown by plasma-assisted molecular-beam epitaxy on AlN(0001) in a Stranski-Krastanov mode. In particular, we assess the variation of their height and density as a function of GaN coverage. We show that…

Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering…

Twin growth in hexagonal close-packed zirconium is investigated at the atomic scale by modeling the various disconnections that can exist on twin boundaries. Thanks to a coupling with elasticity theory, core energies are extracted from…

The thermodynamics of the Stranski-Krastanov mode of epitaxial growth and the effect of the sign of the lattice misfit are discussed. The Stranski-Krastanov mode of growth represents a sequence of layer-by-layer or Frank-van der Merwe…

We study how FeO w\"{u}stite films on Ru(0001) grow by oxygen-assisted molecular beam epitaxy at elevated temperatures (800-900 K). The nucleation and growth of FeO islands are observed in real time by low-energy electron microscopy (LEEM).…

Using the Monte Carlo method, we have studied the pulsed laser deposition process at the sub-monolayer regime. In our simulations, dissociation of an atom from a cluster is incorporated. Our results indicate that the pulsed laser deposition…

Graphite surfaces interact weakly with molecules compared to other conducting surfaces bringing the molecule-molecule interaction to the foreground. C$_{60}$ on highly oriented pyrolytic graphite is a model system for studying the molecular…

A bimodal size distribution of two dimensional islands is inferred during interface formation in heteroepitaxial growth of Bismuth Ferrite on (001) oriented SrTiO3 by sputter deposition. Features observed by in-situ x-ray scattering are…

We present a model for thin film growth by particle deposition that takes into account the possible evaporation of the particles deposited on the surface. Our model focuses on the formation of two-dimensional structures. We find that the…

We have investigated InGaAs layers grown by molecular-beam epitaxy on GaAs(001) by transmission electron microscopy (TEM) and photoluminescence spectroscopy. InGaAs layers with In-concentrations of 16, 25 and 28 % and respective thicknesses…

This paper identifies constraints on the growth of a small planetary core (0.3 M$_{\oplus}$) that accretes millimeter-sized pebbles from a gaseous disk. We construct time-dependent spherical envelope models that capture physical processes…

False-vacuum decay between two morphologically distinct supersolid phases via bubble nucleation is studied in a uniform dipolar gas confined to the plane. Starting from a metastable honeycomb state, the formation of stripe phase domains is…

Molecular beam epitaxy (MBE) is an epitaxy method for thin film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the…

Recent experiments show that the islanding behavior during chemical vapor deposition (CVD) of Si on Si(111) using disilane (Si${_2}$H${_6}$) is quite different from that due to molecular beam epitaxy (MBE). While the latter can be…