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相关论文: Self-interaction correction in the LDA+U method

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We present the first principles results of point defect energetics in silicon calculated using the LDA+U method: a Hubbard type on-site interaction added to the local density approximation (LDA). The on-site Coulomb and exchange parameters…

材料科学 · 物理学 2007-05-23 Panchapakesan Ramanarayanan , Renat F. Sabirianov , Kyeongjae Cho

The aim of this review article is to assess the descriptive capabilities of the Hubbard-rooted LDA+U method and to clarify the conditions under which it can be expected to be most predictive. The paper illustrates the theoretical foundation…

材料科学 · 物理学 2013-09-17 Burak Himmetoglu , Andrea Floris , Stefano de Gironcoli , Matteo Cococcioni

In electronic structure methods based on the correction of approximate density-functional theory (DFT) for systematic inaccuracies, Hubbard $U$ parameters may be used to quantify and amend the self-interaction errors ascribed to selected…

强关联电子 · 物理学 2017-04-27 Glenn Moynihan , Gilberto Teobaldi , David D. O'Regan

In approximate density functional theory (DFT), the self-interaction error is an electron delocalization anomaly associated with underestimated insulating gaps. It exhibits a predominantly quadratic energy-density curve that is amenable to…

化学物理 · 物理学 2016-12-21 Glenn Moynihan , Gilberto Teobaldi , David D. O'Regan

In this work we reexamine the LDA+U method of Anisimov and coworkers in the framework of a plane-wave pseudopotential approach. A simplified rotational-invariant formulation is adopted. The calculation of the Hubbard U entering the…

材料科学 · 物理学 2009-11-10 Matteo Cococcioni , Stefano de Gironcoli

Hubbard-corrected density functional theory, denoted by DFT+U method, was developed to enable correct prediction of insulating properties for strongly-correlated electron systems. UO$_2$ is an example having O-$2p$, U-$6d$, and U-$5f$…

强关联电子 · 物理学 2023-02-28 Mahmoud Payami

A self-consistent calculation scheme for correlated electron systems is created based on the density-functional theory (DFT). Our scheme is a multi-reference DFT (MR-DFT) calculation in which the electron charge density is reproduced by an…

强关联电子 · 物理学 2009-11-13 Koichi Kusakabe , Naoshi Suzuki , Shusuke Yamanaka , Kizashi Yamaguchi

In the density-functional studies of materials with localized electronic states, the local/semilocal exchange-correlation functionals are often either combined with a Hubbard parameter $U$ as in the LDA+$U$ method or mixed with a fraction…

材料科学 · 物理学 2014-07-24 Mehmet Aras , Çetin Kılıç

An intrinsic issue of the LDA+DMFT approach is the so called double counting of interaction terms. How to choose the double-counting potential in a manner that is both physically sound and consistent is unknown. We have conducted an…

强关联电子 · 物理学 2011-06-15 M. Karolak , G. Ulm , T. O. Wehling , V. Mazurenko , A. Poteryaev , A. I. Lichtenstein

The LDA-1/2 method expands Slater's half occupation technique to infinite solid state materials by introducing a self-energy potential centered at the anions to cancel the energy associated with electron-hole self-interaction. To avoid an…

计算物理 · 物理学 2016-03-07 Kan-Hao Xue , Leonardo R. C. Fonseca , Xiang-Shui Miao

The ab initio computational method known as Hubbard-corrected density functional theory (DFT+$U$) captures well ground electronic structures of a set of solids that are poorly described by standard DFT alone. Since lattice dynamical…

材料科学 · 物理学 2025-06-17 Wooil Yang , Sabyasachi Tiwari , Feliciano Giustino , Young-Woo Son

We develop an analytical expression for the self-energy of the infinite-dimensional Hubbard model that is correct in a number of different limits. The approach represents a generalization of the iterative perturbation theory to arbitrary…

强关联电子 · 物理学 2009-10-30 M. Potthoff , T. Wegner , W. Nolting

We develop a generalization of the Kohn-Sham density functional theory (KS-DFT) + Hubbard $U$ (DFT+$U$) method to the excited-state regime. This has the form of Hubbard $U$ corrected linear-response time-dependent DFT, or `TDDFT+$U$'.…

强关联电子 · 物理学 2019-04-24 Okan K. Orhan , David D. O'Regan

Accurate computational predictions of band gaps are of practical importance to the modeling and development of semiconductor technologies, such as (opto)electronic devices and photoelectrochemical cells. Among available electronic-structure…

材料科学 · 物理学 2021-03-16 Nicole E. Kirchner-Hall , Wayne Zhao , Yihuang Xiong , Iurii Timrov , Ismaila Dabo

While LDA+U method is well established for strongly correlated materials with well localized orbitals, its application to weakly correlated metals is questionable. By extending the LDA Stoner approach onto LDA+U, we show that LDA+U enhances…

强关联电子 · 物理学 2009-11-07 I. I. Mazin , A. G. Petukhov , L. Chioncel , A. I. Lichtenstein

We discuss a general approach to a realistic theory of the electronic structure in materials containing correlated d- or f- electrons. The main feature of this approach is the taking into account the energy dependence of the electron…

强关联电子 · 物理学 2009-10-30 A. I. Lichtenstein , M. I. Katsnelson

Although the density functional theory plus Hubbard $U$ correction method (DFT+U) is broadly used to study electronic structure of strongly correlated materials, the extension of this method to electron-phonon $g$ matrices has received…

强关联电子 · 物理学 2026-05-21 Jiale Chen , Youyou Tu , Chengliang Xia , Jin Zhao , Hanghui Chen

We discuss the recently proposed LDA'+DMFT approach providing consistent parameter free treatment of the so called double counting problem arising within the LDA+DMFT hybrid computational method for realistic strongly correlated materials.…

强关联电子 · 物理学 2015-06-11 I. A. Nekrasov , N. S. Pavlov , M. V. Sadovskii

Local-spin-density functional calculations may be affected by severe errors when applied to the study of magnetic and strongly-correlated materials. Some of these faults can be traced back to the presence of the spurious self-interaction in…

材料科学 · 物理学 2009-11-10 Alessio Filippetti , Nicola Spaldin

DFT+X methods, such as DFT+U and DFT+DMFT, are important supplements to standard density functional theory when strong on-site Coulomb interactions are present. However, the involvement of external parameters in the underlying model…

强关联电子 · 物理学 2026-03-03 X. L. Pan , H. X. Song , Y. Sun , F. C. Wu , H. Wang , Y. F. Wang , Y. Chen , X. R. Chen , Hua Y. Geng
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