相关论文: Integer quantum Hall effect on a six valley hydrog…
We report a new "dip" effect in the Hall resistance, R_{xy}, of a Si metal-oxide-semiconductor field-effect transistor in the quantum Hall effect regime. With increasing magnetic field, the Hall resistance moves from the plateau at Landau…
We study the integer and fractional quantum Hall effect on a honeycomb lattice at half-filling (graphene) in the presence of disorder and electron-electron interactions. We show that the interactions between the delocalized chiral edge…
The semi-classical study of the integer Quantum Hall conductivity is investigated for electrons in a bi-periodic potential $V(x,y)$. The Hall conductivity is due to the tunnelling effect and we concentrate our study to potentials having…
We examine the hydrostatic stress of electrons strongly confined in a quasi-2D quantum well in the presence of a strong perpendicular and weak in-plane magnetic field. This introduces anisotropy into the stress tensor which is inconsistent…
Recently unusual integer quantum Hall effect was observed in graphene in which the Hall conductivity is quantized as $\sigma_{xy}=(\pm 2, \pm 6, \pm 10, >...) \times \frac{e^2}{h}$, where $e$ is the electron charge and $h$ is the Planck…
In few-layer (FL) transition metal dichalcogenides (TMDC), the conduction bands along the Gamma-K directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by three-fold rotational…
We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature…
Trilayer graphene allows systematic control of its electronic structure through stacking sequence and twist geometry, providing a versatile platform for correlated states. Here we report magnetotransport in alternating twisted trilayer…
ABC-stacked trilayer graphene's chiral band structure results in three ($n=0,1,2$) Landau level orbitals with zero kinetic energy. This unique feature has important consequences on the interaction driven states of the 12-fold degenerate…
Bilayer graphene, in the presence of a one-sided spin-orbit interaction (SOI) induced by a suitably chosen substrate, is predicted to exhibit unconventional Quantum Hall states. The new states arise due to strong SOI-induced splittings of…
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two…
We consider the influence of an external periodic potential on the fractional quantum Hall effect of two-dimensional interacting electron systems. For many electrons on a torus, we find that the splitting of incompressible ground state…
We study the critical properties of the quantum anomalous Hall (QAH) plateau transition in magnetic topological insulators. We introduce a microscopic model for the plateau transition in QAH effect at the coercive field and then map it to…
We report on numerical studies into the interplay of disorder and electron-electron interactions within the integer quantum Hall regime, where the presence of a strong magnetic field and two-dimensional confinement of the electronic system…
We study the phase structure and Hall conductance quantization in weakly coupled multi-layer electron systems in the integer quantum Hall regime. We derive an effective field theory and perform a two-loop renormalization group calculation.…
A recent experiment [Cohen et al., Science 382, 542 (2023)] observed a robustly quantized $e^2/2h$ conductance in a quantum point contact between fractional quantum Hall edges (a quantum Hall transformer), which then vanishes at low…
Undoped Si-SiGe two-dimensional electron gas (2DEG) provide an ideal platform for hosting quantum-dot spin-qubits owing enhanced spin dephasing times and compatibility with standard CMOS technology. The strained Si quantum well reduces the…
We present Hall effect measurements on highly oriented pyrolytic graphite that indicate the occurrence of the integer quantum-Hall-effect. The evidence is given by the observation of regular plateau-like structures in the field dependence…
We investigate electronic transport in high mobility (\textgreater 100,000 cm$^2$/V$\cdot$s) trilayer graphene devices on hexagonal boron nitride, which enables the observation of Shubnikov-de Haas oscillations and an unconventional quantum…
Scaling properties of the quantum Hall metal-insulator transition are severely affected by finite size effects in small systems. Surprisingly, despite the narrow spatial range where probability structure functions exhibit multifractal…