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At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

The pyrochlore lattice involves corner sharing tetrahedra and the resulting geometric frustration is believed to suppress any antiferromagnetic order for Mott insulators on this structure. There are nevertheless short-range correlations…

强关联电子 · 物理学 2016-10-19 Nyayabanta Swain , Rajarshi Tiwari , Pinaki Majumdar

The Mott-Hubbard metal-insulator transition is one of the most important problems in correlated electron systems. In the past decade, much progress has been made on examining a particle-hole symmetric form of the transition in the Hubbard…

强关联电子 · 物理学 2009-11-10 D. O. Demchenko , A. V. Joura , J. K. Freericks

An instability of a diffusive Fermi liquid, indicative of a metal-insulator transition (expected to be of first order), arising solely from the competition between quenched disorder and short-ranged interparticle interactions is identified…

无序系统与神经网络 · 物理学 2009-11-11 Matthew S. Foster , Andreas W. W. Ludwig

The Mott critical point between a metal and a correlated insulator has usually been studied via density or spin density bosonic mode fluctuations according to the standard Ginzburg-Landau-Wilson phase transition paradigm. A moment's…

强关联电子 · 物理学 2011-02-19 Zaira Nazario , David I. Santiago

In order to explore the origin of the Metal-Insulator (M-I) transition, the precise crystal structures of the hole-doped Mott insulator system, Y1-XCaXTiO3 (x=0.37, 0.39 and 0.41), are studied for the temperature range between 20K and 300K…

强关联电子 · 物理学 2009-11-07 K. Kato , E. Nishibori , M. Takata , M. Sakata , T. Nakano , K. Uchihira , M. Tsubota , F. Iga , T. Takabatake

Using conceptually and procedurally consistent density functional theory (DFT) calculations with an advanced meta-GGA exchange-correlation functional in ab initio molecular dynamics simulations, we determine the insulator-metal transition…

A metal-insulator transition in two-dimensional electron gases at B=0 is found in Ga(Al)As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs…

介观与纳米尺度物理 · 物理学 2009-10-31 E. Ribeiro , R. Jaeggi , T. Heinzel , K. Ensslin , G. Medeiros-Ribeiro , P. M. Petroff

A Metal-Disordered Mott insulator-Metal heterostructure is studied at half-fiiling using unrestricted Hartree Fock method. The corresponding clean system has been shown to be an insulator for any finite on site correlation. Interestingly we…

强关联电子 · 物理学 2011-03-22 Sanjay Gupta , Tribikram Gupta

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

无序系统与神经网络 · 物理学 2015-06-24 George Kastrinakis

By means of exact diagonalizations, the Bernevig-Hughes-Zhang model at quarter-filling in the limit of strong Hubbard on-site repulsion is investigated. We find that the non-interacting metallic state will be turned into a Chern insulator…

强关联电子 · 物理学 2025-04-09 Yu-Chin Tzeng , Po-Yao Chang , Min-Fong Yang

By carefully analyzing the low temperature density dependence of 2D conductivity in undoped high mobility n-GaAs heterostructures, we conclude that the 2D metal-insulator transition in this system is a density inhomogeneity driven…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Das Sarma , M. P. Lilly , E. H. Hwang , L. N. Pfeiffer , K. W. West , J. L. Reno

We observe an insulator-to-metal (I-M) transition in crystalline silicon doped with sulfur to non- equilibrium concentrations using ion implantation followed by pulsed laser melting and rapid resolidification. This I-M transition is due to…

材料科学 · 物理学 2015-05-27 Mark T. Winkler , Daniel Recht , Meng-Ju Sher , Aurore J. Said , Eric Mazur , Michael J. Aziz

I present an informal discussion of various cases where two-dimensional surface metal-insulator structural and charge-density-wave instabilities driven by partly filled surface states have been advocated. These include reconstructions of…

凝聚态物理 · 物理学 2007-05-23 E. TOSATTI

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

Spin and charge fluctuations at vicinity of metal-to-Mott insulator transitions are studied in an organic solid with molecular dimers. The extended Hubbard model taking account of the internal electronic degree of freedom in a molecular…

强关联电子 · 物理学 2017-04-26 Naomichi Sato , Tsutomu Watanabe , Makoto Naka , Sumio Ishihara

The interplay between Mott and Anderson routes to localization in disordered interacting systems gives rise to different transitions and transport regimes. Here, we investigate the phase diagram at finite temperatures using dynamical mean…

强关联电子 · 物理学 2015-09-25 Helena Braganca , M. C. O. Aguiar , J. Vucicevic , D. Tanaskovic , V. Dobrosavljevic

It has been proposed that an extended version of the Hubbard model which potentially hosts rich correlated physics may be well simulated by the transition metal dichalcogenide (TMD) moir\'{e} heterostructures. Motivated by recent reports of…

强关联电子 · 物理学 2022-06-30 Yichen Xu , Xiao-Chuan Wu , Mengxing Ye , Zhu-Xi Luo , Chao-Ming Jian , Cenke Xu

We determine numerically the ground state of the two-dimensional, fully polarized electron gas within the Hartree-Fock approximation without imposing any particular symmetries on the solutions. At low electronic densities, the Wigner…

强关联电子 · 物理学 2014-03-04 B. Bernu , F. Delyon , M. Duneau , M. Holzmann