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The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

We determine the ground state of the two-dimensional, fully polarized electron gas within the Hartree-Fock approximation without imposing any particular symmetries on the solutions. At low electronic densities, the Wigner crystal solution…

强关联电子 · 物理学 2014-03-04 B. Bernu , F. Delyon , M. Duneau , M. Holzmann

Motivated by the resistive switchings in transition-metal oxides (TMOs) induced by a voltage bias, we study the far-from-equilibrium dynamics of an electric-field-driven strongly-correlated model featuring a first-order insulator-to-metal…

强关联电子 · 物理学 2023-05-26 Manuel I. Díaz , Jong E. Han , Camille Aron

We present a theory for disordered interacting electrons that can describe both the Mott and the Anderson transition in the respective limits of zero disorder and zero interaction. We use it to investigate the T=0 Mott-Anderson transition…

强关联电子 · 物理学 2009-10-28 V. Dobrosavljevic , G. Kotliar

We consider the dimer Hubbard model within Dynamical Mean Field Theory to study the interplay and competition between Mott and Peierls physics. We describe the various metal-insulator transition lines of the phase diagram and the break down…

强关联电子 · 物理学 2018-01-17 O. Nájera , M. Civelli , V. Dobrosavljević , M. J. Rozenberg

We find that isoelectronic disorder destroys the spectral gap in a Mott-Hubbard insulator in 2D leading, most unexpectedly, to a new metallic phase. This phase is spatially inhomogeneous with metallic behavior coexisting with…

强关联电子 · 物理学 2013-05-29 Dariush Heidarian , Nandini Trivedi

We investigate the half-filled Hubbard model with spatially alternating interactions by means of the two-site dynamical mean-field theory. It is found that a single Mott transition occurs when two kinds of interactions are increased. This…

强关联电子 · 物理学 2012-04-20 Takamitsu Saitou , Akihisa Koga , Atsushi Yamamoto

We use a random gap model to describe a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order parameter. Spontaneous symmetry…

无序系统与神经网络 · 物理学 2019-11-04 K. Ziegler

We exhibit an interaction-driven metal-insulator quantum phase transition in a holographic model. Use of a helical lattice enables us to break translation invariance while preserving homogeneity. The metallic phase is characterized by a…

高能物理 - 理论 · 物理学 2013-01-22 Aristomenis Donos , Sean A. Hartnoll

Ultrafast phase transitions induced by femtosecond light pulses present a new opportunity for manipulating the properties of materials. Understanding how these transient states are different from, or similar to, their thermal counterparts…

We investigate nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half-filling within the 8-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures…

强关联电子 · 物理学 2014-08-19 Yuki Yanagi , Kazuo Ueda

The Mott transition in a multi-orbital Hubbard model involving subbands of different widths is studied within the dynamical mean field theory. Using the iterated perturbation theory for the quantum impurity problem it is shown that at low…

强关联电子 · 物理学 2009-11-10 A. Liebsch

We study the boundary physics of bulk insulators by considering three coupled Hubbard chains in a linear confining potential. In the Hartree-Fock approximation, the ground state at and slightly off the particle-hole symmetric point remains…

介观与纳米尺度物理 · 物理学 2022-02-10 Niels John , Yuval Gefen , Bernd Rosenow

A new two-pole approximation, which allows to describe the transition from an insulating state to a metallic one at increase of bandwidth, and also the observable in some compounds transition from a metalic state to an insulating one with…

强关联电子 · 物理学 2007-05-23 Leonid Didukh

Ginzburg-Landau theory describes phase transitions as the competition between energy and entropy: The ordered phase has lower energy, while the disordered phase has larger entropy. When heating the system, ordering is reduced entropically…

强关联电子 · 物理学 2017-08-16 Hunter Sims , Eva Pavarini , Erik Koch

We report the observation of a metal insulator transition at B=0 in a high mobility two dimensional hole gas in a GaAs-AlGaAs heterostructure. A clear critical point separates the insulating phase from the metallic phase, demonstrating the…

强关联电子 · 物理学 2009-10-30 M. Y. Simmons , A. R. Hamilton , M. Pepper , E. H. Linfield , P. D. Rose , D. A. Ritchie

More than half a century after first being proposed by Sir Nevill Mott, the deceptively simple question of whether the interaction-driven electronic metal-insulator transition may be continuous remains enigmatic. Recent experiments on…

We theoretically study the metal-insulator transition in a molecular conductor (MDT-TS)(AuI$_2$)$_{x}$ composed with an incommensurate ratio ($x = 0.441$), where the conduction band originated from the HOMO of donor MDT-TS molecules is…

强关联电子 · 物理学 2015-05-27 Hideo Yoshioka , Hitoshi Seo , Yuichi Otsuka

$VO_2$ undergoes the insulator-metal transition (IMT) and monoclinic-rutile structural phase transition (SPT) near $67^oC$. The IMT switching has many applications. However, there is an unresolved issue whether the IMT is a Mott transition…

强关联电子 · 物理学 2021-01-18 Chang-Yong Kim , Tetiana Slusar , Jinchul Cho , Hyun-Tak Kim

It is well established that for non-interacting electrons, increasing disorder drives a metal into a gapless localized Anderson insulator. While in three dimensions a threshold in disorder must be crossed for the transition, in two…

强关联电子 · 物理学 2015-06-15 Elias Lahoud , O. Nganba Meetei , K. B. Chaska , A Kanigel , Nandini Trivedi