相关论文: Herzfeld instability versus Mott transition in met…
We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…
Appropriately designed transition metal oxide heterostructures involving small band gap Mott insulators are argued to support spatially separated electron and hole gasses at equilibrium. Spatial separations and carrier densities favoring…
Using a three-frequency one-dimensional kicked rotor experimentally realized with a cold atomic gas, we study the transport properties at the critical point of the metal-insulator Anderson transition. We accurately measure the…
We study the metal-insulator transition accompanied with a charge ordering in the one-dimensional (1D) t-J' model at quarter filling by the density matrix renormalization group method. In this model the nearest-neighbor hopping energy t…
An intricate interplay between superconductivity, pseudogap and Mott transition, either bandwidth driven or doping driven, occurs in materials. Layered organic conductors and cuprates offer two prime examples. We provide a unified…
We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…
We study the Mott transition, antiferromagnetism and superconductivity in layered organic conductors using Cellular Dynamical Mean Field Theory for the frustrated Hubbard model. A d-wave superconducting phase appears between an…
In the present paper metal-insulator transition is studied in a generalized Hubbard model with correlated hopping at half-filling and zero temperature. Single-particle Green function and energy spectrum of electron system are calculated.…
Two phenomena have been recently observed in high-mobility Si MOS structures: (1) strong enhancement of the metallic conduction at low temperatures, T < 2K, and (2) the scaling behavior of the temperature and electric field dependences of…
A metal can be driven to an insulating phase through distinct mechanisms. A possible way is via the Coulomb interaction, which then defines the Mott metal-insulator transition (MIT). Another possibility is the MIT driven by disorder, the…
The use of intense tailored light fields is the perfect tool to achieve ultrafast control of electronic properties in quantum materials. Among them, Mott insulators are materials in which strong electron-electron interactions drive the…
For the first order Metal Insulator Transitions we show that together with the d.c conductance zero there is a second critical point, where the dielectric constant becomes zero and further turns negative. At this point the metallic…
Transition metal dichalcogenide superlattices provide an exciting new platform for exploring and understanding a variety of phases of matter. The moir\'e continuum Hamiltonian, of two-dimensional jellium in a modulating potential, provides…
On doping polar dielectrics, such as the cuprates or liquid ammonia, the long range polarization leads to the formation of bound states (polarons or solvated electrons). However, the exact role of such entities in the metal-insulator…
The recent experimental observation of a metal-insulator transition in two dimensions prompts a re-examination of the theory of disordered interacting systems. We argue that the existing theory permits the existence of a metallic phase and…
Using an \textit{ab initio} approach based on the GW approximation which includes strong local \textbf{k}-space correlations, the Metal-Insulator Transition of M$_2$ vanadium dioxide is broken down into its component parts and investigated.…
We study a range of thermodynamic properties (charge susceptibility, specific heat, entropy and spin susceptibility) of the Hubbard model on the anisotropic triangular lattice at half filling by means of the numerical finite-temperature…
For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by…
Quantum wells made of simple polyvalent metals represent a novel family of doped 2D Mott-Hubbard insulators. As scanning tunneling microscopy experiments show, these systems exhibit an anisotropic form of metal-insulator transition. Their…
Resistive switching can be achieved in a Mott insulator by applying current/voltage, which triggers an insulator-metal transition (IMT). This phenomenon is key for understanding IMT physics and developing novel memory elements and…