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A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…

介观与纳米尺度物理 · 物理学 2012-02-21 Theodore Choi , Thomas Ihn , Silke Schön , Klaus Ensslin

Compact and reliable sources of non-classical light could find many applications in emerging technologies such as quantum cryptography, quantum imaging and also in fundamental tests of quantum physics. Single self-assembled quantum dots…

Nanowire (NW)-based opto-electronic devices require certain engineering in the NW geometry to realize polarized-dependent light sources and photodetectors. We present a growth procedure to produce InAs/InP quantum dot-nanowires (QD-NWs)…

材料科学 · 物理学 2021-11-23 Ali Jaffal , Philippe Regreny , Gilles Patriarche , Michel Gendry , Nicolas Chauvin

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…

介观与纳米尺度物理 · 物理学 2010-07-15 B. Alén , D. Fuster , Y. González , L. González , J. Martínez-Pastor , M. U. González , J. M. García

For the development of long-distance quantum networks, sources of single photons and entangled photon pairs emitting in the low-loss wavelength region around 1550 nm are a crucial building block. Here we show that quantum dot devices based…

We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…

介观与纳米尺度物理 · 物理学 2012-02-21 C. Hermannstädter , N. A. Jahan , J. -H. Huh , H. Sasakura , K. Akahane , M. Sasaki , I. Suemune

III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/AlN QDs…

We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an…

We demonstrate an in-situ technique to tune the emission energy of semiconductor quantum dots. The technique is based on laser-induced atomic intermixing applied to nanowire quantum dots grown using a site-selective process that allows for…

介观与纳米尺度物理 · 物理学 2018-08-29 Alexis Fiset-Cyr , Dan Dalacu , Sofiane Haffouz , Philip J. Poole , Jean Lapointe , Geof C. Aers , Robin L. William

We study a single-level quantum dot strongly coupled to a superconducting lead and tunnel-coupled to a normal electrode which can exchange energy with a single-mode resonator. We show that a such system can sustain lasing characterized by a…

介观与纳米尺度物理 · 物理学 2019-09-04 Gianluca Rastelli , Michele Governale

Self-assembled semiconductor quantum dots show remarkable optical and spin coherence properties, which have lead to a concerted research effort examining their potential as a quantum bit for quantum information science1-6. Here, we present…

介观与纳米尺度物理 · 物理学 2012-07-20 A. N. Vamivakas , Y. Zhao , S. Falt , A. Badolato , J. M. Taylor , M. Atature

The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…

介观与纳米尺度物理 · 物理学 2015-05-27 M. Wiesner , W. -M. Schulz , C. Kessler , M. Reischle , R. Rossbach , M. Jetter , P. Michler

The superconducting nanowire single-photon detector (SNSPD) is a quantum-limit superconducting optical detector based on the Cooper-pair breaking effect by a single photon, which exhibits a higher detection efficiency, lower dark count…

仪器与探测器 · 物理学 2020-06-02 Lixing You

We consider an effective mass model for an electron-hole pair in a simplified confinement potential, which is applicable to both a nanoscopic self-assembled semiconducting InAs ring and a quantum dot. The linear optical susceptibility,…

介观与纳米尺度物理 · 物理学 2009-10-31 Hui Hu , Guang-Ming Zhang , Jia-Lin Zhu , Jia-Jiong Xiong

Quantum dots embedded in semiconductor photonic nanowires (NW-QDs) can deterministically produce single-photons and entangled photon pairs at high repetition rates. These photons can be efficiently coupled from the photonic nanowire into…

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present…

介观与纳米尺度物理 · 物理学 2023-08-10 Chang-Min Lee , Mustafa Atabey Buyukkaya , Shahriar Aghaeimeibodi , Christopher J. K. Richardson , Edo Waks

The realization of long-distance quantum communication and the envisioned quantum internet relies on coherent hybrid light-matter interfaces connecting quantum light emitters with quantum memory (QM) systems. Unlike probabilistic photon…

We demonstrate an elastically-tunable self-assembled quantum dot in a nanowire antenna that emits single photons with resolution-limited spectral linewidths. The single-photon device is comprised of a single quantum dot embedded in a…

介观与纳米尺度物理 · 物理学 2016-01-11 P. E. Kremer , A. C. Dada , P. Kumar , Y. Ma , S. Kumar , E. Clarke , B. D. Gerardot

Gated InGaAs/InP avalanche photodiodes are the most practical device for detection of telecom single photons arriving at regular intervals.Here, we report the development of a compact single-photon detector (SPD) module measured just 8.8cm…

仪器与探测器 · 物理学 2024-01-08 Yan Zhengyu , Shi Tingting , Fan Yuanbin , Zhou Lai , Yuan Zhiliang

Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis,…