Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In,Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.
@article{arxiv.1210.7144,
title = {Current path in light emitting diodes based on nanowire ensembles},
author = {Friederich Limbach and Christian Hauswald and Jonas Lähnemann and Martin Wölz and Oliver Brandt and Achim Trampert and Michael Hanke and Uwe Jahn and Raffaella Calarco and Lutz Geelhaar and Henning Riechert},
journal= {arXiv preprint arXiv:1210.7144},
year = {2012}
}
Comments
This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at doi:10.1088/0957-4484/23/46/465301