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相关论文: Mott and Band Insulator Transitions in the Binary …

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We investigate the infinite-dimensional two-orbital Hubbard model at arbitrary band fillings. By means of the self-energy functional approach, we discuss the stability of the metallic state in the systems with same and different bandwidths.…

强关联电子 · 物理学 2009-11-13 Kensuke Inaba , Akihisa Koga

Correlated electrons in a binary alloy $A_{x}B_{1-x}$ are investigated within the Hubbard model and dynamical mean--field theory (DMFT). The random energies $\epsilon_{i}$ have a bimodal probability distribution and an energy separation…

强关联电子 · 物理学 2009-11-10 Krzysztof Byczuk , Walter Hofstetter , Dieter Vollhardt

The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…

强关联电子 · 物理学 2009-11-13 S. S. Kancharla , S. Okamoto

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

We study the transitions from band insulator to metal to Mott insulator in the ionic Hubbard model on a two dimensional square lattice using determinant Quantum Monte Carlo. Evaluation of the temperature dependence of the conductivity…

强关联电子 · 物理学 2009-11-11 N. Paris , K. Bouadim , F. Hebert , G. G. Batrouni , R. T. Scalettar

We investigate the phases of the ionic Hubbard model in a two-dimensional square lattice using determinant quantum Monte Carlo (DQMC). At half-filling, when the interaction strength or the staggered potential dominate we find Mott and band…

强关联电子 · 物理学 2009-11-13 K. Bouadim , N. Paris , F. Hebert , G. G. Batrouni , R. T. Scalettar

For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we…

强关联电子 · 物理学 2011-08-31 G. Sordi , K. Haule , A. -M. S. Tremblay

The paramagnetic phase diagrams of the half-filled Hubbard model on a twisted bilayer square lattice are investigated using coherent potential approximation. Besides the conventional metallic, band insulating, and Mott insulating phases, we…

强关联电子 · 物理学 2024-04-09 Xiu-Cai Jiang , Ze Ruan , Yu-Zhong Zhang

We investigate the ground state phase diagram of the half-filled repulsive Hubbard model in two dimensions in the presence of a staggered potential $\Delta$, the so-called ionic Hubbard model, using cluster dynamical mean field theory. We…

强关联电子 · 物理学 2015-06-25 S. S. Kancharla , E. Dagotto

A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…

强关联电子 · 物理学 2009-11-13 L. Craco , P. Lombardo , R. Hayn , G. I. Japaridze , E. Müller-Hartmann

We show that the Mott metal-insulator transition in the standard one-band Hubbard model can be understood as a topological phase transition. Our approach is inspired by the observation that the mid-gap pole in the self-energy of a Mott…

强关联电子 · 物理学 2020-08-26 Sudeshna Sen , Patrick J. Wong , Andrew K. Mitchell

We investigate the phase diagram of the square lattice bilayer Hubbard model at half filling with the variational Monte Carlo method for both the magnetic and the paramagnetic case as a function of interlayer hopping t_perp and on-site…

强关联电子 · 物理学 2014-03-11 Robert Rüger , Luca F. Tocchio , Roser Valentí , Claudius Gros

A possibility of a metal-insulator transition in molecular conductors has been studied for systems composed of donor molecules and fully ionized anions with an incommensurate ratio close to 2:1 based on a one-dimensional extended Hubbard…

强关联电子 · 物理学 2009-11-11 Hideo Yoshioka , Hitoshi Seo , Hidetoshi Fukuyama

We study a two-dimensional bosonic Hubbard model with two hard-core species away from half filling using Quantum Monte Carlo simulations. The model includes a repulsive interspecies interaction and different nearest-neighbor hopping terms…

The periodic Anderson model (PAM) is studied within the framework of dynamical mean-field theory, with particular emphasis on the interaction-driven Mott transition it contains, and on resultant Mott insulators of both Mott-Hubbard and…

强关联电子 · 物理学 2016-12-15 David E. Logan , Martin R. Galpin , Jonathan Mannouch

We study the effect of disorder on the semimetal -- Mott insulator transition in the half-filled repulsive Hubbard model on a honeycomb lattice, a system that features vanishing density of states at the Fermi level. Using the determinant…

强关联电子 · 物理学 2018-03-22 Tianxing Ma , Lufeng Zhang , Chia-Chen Chang , Hsiang-Hsuan Hung , Richard T. Scalettar

The Mott-Hubbard transition is studied in the context of the two-dimensional Hubbard model. Analytical calculations show the existence of a critical value Uc of the potential strength which separates a paramagnetic metallic phase from a…

强关联电子 · 物理学 2007-05-23 F. Mancini

We study Mott insulator - superfluid transition in a two-band boson Hubbard model, which can be mapped onto a spin-1/2 XY model with spins coupled to an additional Ising degree of freedom. By using a modified mean field theory that include…

统计力学 · 物理学 2009-11-13 Huai-Bin Zhuang , Michael Ma , Xi Dai , Fu-Chun Zhang

Strong correlation effects, which are often associated to the approach to a Mott insulating state, in some cases may be observed even far from half-filling. This typically happens whenever the inter-site Coulomb repulsion induces a tendency…

Using the nonlocal coherent-potential approximation we study the effect of intersite spatial correlations on the transition from band insulator to metal as well as from metal to Mott insulator in the "alloy analogy" approach to the…

强关联电子 · 物理学 2014-07-22 D. A. Rowlands , Yu-Zhong Zhang
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