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相关论文: Magnetic-field-induced transition in BaVS3

200 篇论文

An abrupt first-order metal-insulator transition (MIT) as a jump of the density of states is observed for Be doped GaAs, which is known as a semiconductor, by inducing very low holes of approximately n_p=5x10^{14} cm^{-3} into the valence…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Yong-Sik Lim

In a recent experiment, Siegrist et al. [Nature Materials 10, 202 (2011)] investigated the metal-insulator transition (MIT) of GeSb_2Te_4 on increasing annealing temperature. The authors conclude that this material exhibits a discontinuous…

无序系统与神经网络 · 物理学 2018-02-27 A. Mobius

Magnetic properties of the conduction pi-electron system of kappa-BETS)2Mn[N(CN)2]3 have been probed using 13C NMR. At ambient pressure, the metal-insulator transition observed in the resistivity measurements below T~23K is shown to be…

强关联电子 · 物理学 2015-06-04 O. M. Vyaselev , M. V. Kartsovnik , N. D. Kushch , E. B. Yagubskii

The temperature dependence of the local structure of V_2O_3 in the vicinity of the metal to insulator transition (MIT) has been investigated using hard X-ray absorption spectroscopy. It is shown that the vanadium pair distance along the…

强关联电子 · 物理学 2009-11-11 P. Pfalzer , G. Obermeier , M. Klemm , S. Horn , M. L. denBoer

Pb$_2$CoOsO$_6$ is a newly synthesized polar metal in which inversion symmetry is broken by the magnetic frustration in an antiferromagnetic ordering of Co and Os sublattices. The coupled magnetic and structural transition occurs at 45 K at…

We report on the electric field control of magnetic phase transition temperatures in multiferroic Ni3V2O8 thin films. Using magnetization measurements, we find that the phase transition temperature to the canted antiferromagnetic state is…

材料科学 · 物理学 2007-11-28 P. Kharel , C. Sudakar , A. B. Harris , R. Naik , G. Lawes

We investigate the effect of pressure on the electronic and magnetic states of CdV$_2$O$_4$ by using ab initio electronic structure calculations. The Coulomb correlation and spin-orbit coupling play important role in deciding the…

强关联电子 · 物理学 2012-08-06 Sudhir K. Pandey

We present a muon spin relaxation study of the Mott transition in BaCoS_2 using two independent control parameters: (i) pressure p to tune the electronic bandwidth and (ii) Ni-substitution x on the Co site to tune the band filling. For both…

The Metal-Insulator transition (MIT) in VO2 is characterized by the complex interplay among lattice, electronic and orbital degrees of freedom. In this contribution we investigated the strain-modulation of the orbital hierarchy and the…

We present magnetization measurements carried out on polycrystalline and single-crystalline samples of $\alpha$-Li$_2$IrO$_3$ under hydrostatic pressures up to 2 GPa and establish the temperature-pressure phase diagram of this material. The…

The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa)…

强关联电子 · 物理学 2009-11-11 R. Lengsdorf , A. Barla , J. A. Alonso , M. J. Martinez-Lope , H. Micklitz , M. M. Abd-Elmeguid

The recent observation of a insulator to metal transition (IMT) [I. Loa et al, PRL 87, 125501 (2001)] in pure LaMnO$_3$ at 32 GPa and room temperature, well above the Neel temperature (145 K) and below the Jahn-Teller transition temperature…

强关联电子 · 物理学 2009-04-16 Javier D. Fuhr , Blas Alascio , Michel Avignon

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…

材料科学 · 物理学 2021-10-13 Kun Han , Hanyu Wang , Liang Wu , Yu Cao , Dong-Chen Qi , Changjian Li , Zhen Huang , Xiao Li , X. Renshaw Wang

An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018%…

强关联电子 · 物理学 2009-11-10 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

We have measured Hall effect, magnetotransport and magnetostriction on the field induced phases of single crystalline UPt$_2$Si$_2$ in magnetic fields up to 60\,T at temperatures down to 50\,mK. For the magnetic field applied along the $c$…

强关联电子 · 物理学 2017-04-19 D. Schulze Grachtrup , N. Steinki , S. Süllow , Z. Cakir , G. Zwicknagl , Y. Krupko , I. Sheikin , M. Jaime , J. A. Mydosh

For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is observed by inducing internal optical phonon-coupled holes…

强关联电子 · 物理学 2007-05-23 Hyun-Tak Kim , B. G. Chae , D. H. Youn , S. L. Maeng , K. Y. Kang

Electronic states under pressure exhibit unconventional spin and charge dynamics that provide a powerful route to uncover exotic phases in quantum materials. Here, we present the structural, magnetic, and electronic evolution of…

In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…

We present a systematic pressure study of poly- and single crystalline SrFe2As2 by electrical resistivity and X-ray diffraction measurements. SrFe2As2 exhibits a structural phase transition from a tetragonal to an orthorhombic phase at…

We investigate the paramagnetic-metal-to-antiferromagnetic-metal and antiferromagnetic-metal-to- antiferromagnetic-insulator transitions using a slave-boson mean-field theory. To this effect, we discuss the ground state of the half-filled…

强关联电子 · 物理学 2009-10-31 Imseok Yang , Ekkehard Lange , Gabriel Kotliar