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A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric…

强关联电子 · 物理学 2009-11-10 Satoshi Okamoto , Andrew J. Millis

In pursuit of creating cuprate-like electronic and orbital structures, artificial heterostructures based on LaNiO$_3$ have inspired a wealth of exciting experimental and theoretical results. However, to date there is a very limited…

It is shown that LaTiO_3 in superlattices with SrTiO_3 is not a Mott insulator but a strongly correlated metal. The tetragonal lattice geometry imposed by the SrTiO_3 substrate leads to an increase of the Ti 3d t2g band width and a reversal…

强关联电子 · 物理学 2009-11-13 H. Ishida , A. Liebsch

We use density functional theory plus dynamical mean-field theory to demonstrate the emergence of a metallic layer at the interface between the two Mott insulators LaTiO$_3$ and LaVO$_3$. The metallic layer is due to charge transfer across…

强关联电子 · 物理学 2019-09-11 Sophie Beck , Claude Ederer

We use resonant soft x-ray scattering to study electronic reconstruction at the interface between the Mott insulator LaMnO3 and the "band" insulator SrMnO3. Superlattices of these two insulators were shown previously to have both…

The possibility of novel behavior at interfaces between strongly and weakly correlated materials has come under increased study recently. In this paper, we use determinant Quantum Monte Carlo to determine the inter-penetration of metallic…

强关联电子 · 物理学 2013-05-30 M. Jiang , G. G. Batrouni , R. T. Scalettar

Transition metal oxides display a great variety of quantum electronic behaviours where correlations often play an important role. The achievement of high quality epitaxial interfaces involving such materials gives a unique opportunity to…

We have studied the electronic structure at the heterointerface between the band insulators LaAlO$_3$ and SrTiO$_3$ using $in situ$ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on…

材料科学 · 物理学 2008-07-31 K. Yoshimatsu , R. Yasuhara , H. Kumigashira , M. Oshima

Metallic interfaces between insulating perovskites are often observed in heterostructures combining polar and nonpolar materials. In these systems, the polar discontinuity across the interface may drive an electronic reconstruction inducing…

强关联电子 · 物理学 2014-10-22 Yukiko Omori , Andreas Rüegg , Manfred Sigrist

The electronic structure at the interface between a topological band insulator and a Mott insulator is studied within layer dynamical mean field theory. To represent the bulk phases of these systems, we use the generalized…

强关联电子 · 物理学 2015-06-22 H. Ishida , A. Liebsch

We propose a simple analytical model to explain possible appearance of the metallic conductivity in the two-dimensional (2D) LaAlO$_3$/SrTiO$_3$ interface. Our model considers the interface within a macroscopic approach which is usual to…

材料科学 · 物理学 2016-01-20 V. A. Stephanovich , V. K. Dugaev

The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the…

Gapless boundary modes at the interface between topologically distinct regions are one of the most salient manifestations of topology in physics. Metallic boundary states of time-reversal-invariant topological insulators (TIs), a…

材料科学 · 物理学 2017-02-14 Hyungjun Lee , Oleg V. Yazyev

We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting…

强关联电子 · 物理学 2010-09-29 Christopher N. Varney , Kai Sun , Marcos Rigol , Victor Galitski

We present a theoretical study of a model heterostructure for a Mott-insulator sandwiched between two band insulators, such as SrTiO3/LaTiO3. Particular emphasis is given on the interplay between magnetism and inhomogeneous charge…

强关联电子 · 物理学 2013-02-19 Suguru Ueda , Norio Kawakami , Manfred Sigrist

We consider a heterostructure of a metal and a barrier with onsite correlation at half filling using unrestricted Hartree Fock. We find that above a certain value of correlation strength in the barrier planes, the system is a Mott…

强关联电子 · 物理学 2011-03-22 Sanjay Gupta , Tribikram Gupta

We investigate the effect of spatial doping of the Mott insulator LaVO$_3$ by inserting a few layers of the correlated metal SrVO$_3$ in multilayer geometries. Using density functional theory in combination with dynamical mean-field theory,…

强关联电子 · 物理学 2022-12-22 Sophie Beck , Claude Ederer

We report on the fabrication of all perovskite Mott insulator/band insulator YTiO3/CaTiO3 superlattices by pulsed laser deposition. The combination of in situ reflection high energy electron diffraction, X-ray diffraction, and X-ray…

强关联电子 · 物理学 2015-11-25 Xiaoran Liu , D. Choudhury , Yanwei Cao , M. Kareev , S. Middey , J. Chakhalian

We study the effect of spatial inhomogeneity on the physics of a strongly correlated electron system exhibiting a metallic phase and a Mott insulating phase, represented by the simple Hubbard model. In three dimensions, we consider various…

强关联电子 · 物理学 2015-05-14 Giovanni Borghi , Michele Fabrizio , Erio Tosatti

Emergent phases in the two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides have attracted great attention in the past decade. We present ab-initio electronic structure calculations for the interface…

材料科学 · 物理学 2015-12-24 Hrishit Banerjee , Sumilan Banerjee , Mohit Randeria , Tanusri Saha-Dasgupta
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