相关论文: Metal-insulator transition in a weakly interacting…

Self-consistent theory of electron localization in disordered systems is generalized for the case of interacting electrons. We propose and critically compare a number of possible self-consistency schemes which take into account the lowest…

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

We present a theory of the metal-insulator transition in a disordered two-dimensional electron gas. A quantum critical point, separating the metallic phase which is stabilized by electronic interactions, from the insulating phase where…

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

We present the results of electron delocalization in thin films of finite thickness at finite tem- parature induced by thickness of the film and temparature. The two dimensional results show temparature induced metal-insulator transition…

We investigate the zero-temperature metal-insulator transition in a one-dimensional two-component Fermi gas in the presence of a quasi-periodic potential resulting from the superposition of two optical lattices of equal intensity but…

We study the metal-to-insulator transition of the Hubbard model at zero temperatures in infinite dimensions. The coexistence of metallic and insulating solutions for a finite range of the interaction is established. It is shown that the…

The conductance of a disordered finite-size electron system is calculated by reducing the initial dynamic problem of arbitrary dimensionality to strictly one-dimensional problems for one-particle mode propagators. The metallic ground state…

We present a model for the metal-insulator transition in 2D, observed in the recent years. Our starting point consists of two ingredients only, which are ubiquitous in the experiments: Coulomb interactions and weak disorder spin-orbit…

Because it is easily switched from insulator to metal either via chemical doping or electrical gating, silicon is at the core of modern information technology and remains a candidate platform for quantum computing. The metal-to-insulator…

Disorder or sufficiently strong interactions can render a metallic state unstable causing it to turn into an insulating one. Despite the fact that the interplay of these two routes to a vanishing conductivity has been a central research…

The interplay between strong Coulomb interactions and randomness has been a long-standing problem in condensed matter physics. According to the scaling theory of localization, in two-dimensional systems of noninteracting or weakly…

We describe a new possible route to the metal-insulator transition in doped semiconductors such as Si:P or Si:B. We explore the possibility that the loss of metallic transport occurs through Mott localization of electrons into a quantum…

We study two different metal-insulating transitions possibly occurring in one-dimensional Kondo lattices. First, we show how doping the pure Kondo lattice model in the strong-coupling limit, results in a Pokrovsky-Talapov transition. This…

Understanding the metal-insulator transition in disordered many-fermion systems, both with and without interactions, is one of the most challenging and consequential problems in condensed matter physics. In this paper we address this issue…

We determine numerically the ground state of the two-dimensional, fully polarized electron gas within the Hartree-Fock approximation without imposing any particular symmetries on the solutions. At low electronic densities, the Wigner…

Effects of electron correlations on Anderson insulators have been one of the central themes for recent two decades, suggesting that the Anderson insulating phase turns into a novel insulating state referred to as many body localization…

We consider interaction effects in a granular normal metal at not very low temperatures. Assuming that all weak localization effects are suppressed by the temperature we replace the initial Hamiltonian by a proper functional of phases and…

We argue on the basis of experimental numbers that the B=0 metal-insulator transition in two dimensions, observed in Si-MOSFETs and in other two-dimensional systems, is likely to be due to a few strongly interacting electrons, which also…

The electrodynamics near the metal-to-insulator transitions (MIT) induced, in V3O5 single crystals, by both temperature (T) and pressure (P) has been studied by infrared spectroscopy. The T- and P-dependence of the optical conductivity may…