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相关论文: Ga-induced atom wire formation and passivation of …

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The formation of atomic wires via pseudomorphic step-edge decoration on vicinal silicon surfaces has been analyzed for Ga on the Si(112) surface using Scanning Tunneling Microscopy and Density Functional Theory calculations. Based on a…

材料科学 · 物理学 2009-11-10 C. Gonzalez , P. C. Snijders , J. Ortega , R. Perez , F. Flores , S. Rogge , H. H. Weitering

Possibility for the formation of stable Al atomic wire on the Si(211) surface is investigated using density functional theory based total energy calculations. The stable adsorption sites and the surface structures at various sub-monolayer…

材料科学 · 物理学 2007-05-23 Bikash C Gupta , Inder P Batra

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are…

材料科学 · 物理学 2009-10-31 A. Depuydt , C. Van Haesendonck , N. S. Maslova , V. I. Panov , S. V. Savinov , P. I. Arseev

We report on a combined scanning tunneling microscopy (STM) and density functional theory (DFT) based investigation of Co atoms on Ge(111)2x1 surfaces. When deposited on cold surfaces, individual Co atoms have a limited diffusivity on the…

材料科学 · 物理学 2012-03-14 D. A. Muzychenko , K. Schouteden , M. Houssa , S. V. Savinov , C. Van Haesendonck

First principles total-energy pseudopotential calculations have been performed to investigate STM images of the (110) cross-sectional surface of Mn-doped GaAs. We have considered configurations with Mn in interstitial positions in the…

材料科学 · 物理学 2007-05-23 A. Stroppa

We discuss the implementation of quasiparticle calculations for point defects on semiconductor surfaces and, as a specific example, present an ab initio study of the electronic structure of the As vacancy in the +1 charge state on the…

材料科学 · 物理学 2007-05-23 Magnus Hedstrom , Arno Schindlmayr , Matthias Scheffler

Autocompensated Si-doped GaAs is studied with cross-sectional scanning tunneling spectroscopy (X-STS). The local electronic contrasts of substitutional Si(Ga) donors and Si(As) acceptors under the (110) cleavage plane are imaged with high…

介观与纳米尺度物理 · 物理学 2009-11-13 S. Loth , M. Wenderoth , K. Teichmann , R. G. Ulbrich

We report on the investigation of the atomic and electronic structures of a clean Si(331)-(12$\times$1) surface using a first-principles approach with both plane wave and strictly localized basis sets. Starting from the surface structure…

材料科学 · 物理学 2018-12-31 Ruslan Zhachuk , José Coutinho , Krisztián Palotás

The one-dimensional reconstruction of Au/Ge(001) was investigated by means of autocorrelation functions from surface x-ray diffraction (SXRD) and scanning tunneling microscopy (STM). Interatomic distances found in the SXRD-Patterson map are…

In a recent Letter, Zhao et al. [1] reported the origin of quasi-one-dimensional metal-insulator (MI) transitions in compound semiconductor surfaces. Based on a density-functional theory (DFT) calculation within the generalized gradient…

介观与纳米尺度物理 · 物理学 2017-08-02 Sun-Woo Kim , Yoon-Gu Kang , Hyun-Jung Kim , Jun-Hyung Cho

We present a comprehensive investigation of reconstructions on $\beta$-Ga$_2$O$_3$(001) combining first-principles calculations with experimental observations. Using ab initio atomistic thermodynamics and replica-exchange grand-canonical…

The ab initio calculation with the density functional theory and plane-wave bases is carried out for stepped Si(111)-2x1 surfaces that were predicted in a cleavage simulation by the large-scale (order-N) electronic structure theory (T.…

材料科学 · 物理学 2015-05-14 Takeo Hoshi , Masakazu Tanikawa , Akira Ishii

We present a surface passivation method that reduces surface-related losses by almost two orders of magnitude in a highly miniaturized GaAs open microcavity. The microcavity consists of a curved dielectric distributed Bragg reflector (DBR)…

A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is…

介观与纳米尺度物理 · 物理学 2009-10-31 Liang-Xin Li , Sophia Sun , Yia-Chung Chang

Si(111) and Ge(111) surface formation energies were calculated using density functional theory for various biaxial strain states ranging from -0.04 to 0.04, and for a wide set of experimentally observed surface reconstructions: 3x3, 5x5,…

材料科学 · 物理学 2015-06-12 R. Zhachuk , S. Teys , J. Coutinho

We utilize a single atom substitution technique with spectroscopic imaging in a scanning tunneling microscope (STM) to visualize the anisotropic spatial structure of magnetic and non-magnetic transition metal acceptor states in the GaAs…

材料科学 · 物理学 2009-09-30 Anthony Richardella , Dale Kitchen , Ali Yazdani

Using scanning tunneling microscopy together with the first-principles density functional theory calculations we study structural properties of the Si(111)5x2-Au surface covered by Ag adatoms. The STM topography data show that a…

介观与纳米尺度物理 · 物理学 2014-10-09 A. Stepniak , M. Krawiec , M. Jalochowski

We analyze the basic structural units of simple reconstructions of the (111) surface of SrTiO3 using density functional calculations. The prime focus is to answer three questions: what is the most appropriate functional to use; how accurate…

材料科学 · 物理学 2025-09-22 Laurence D. Marks , Ann N. Chiaramonti , Fabien Tran , Peter Blaha

Ab initio calculations were applied to large size slabs simulations for determination of the properties of the principal structures of the stoichiometric GaN(0001) surface. The results are different from published previously: stoichiometric…

材料科学 · 物理学 2024-06-06 Paweł Strak , Wolfram Miller , Stanisław Krukowski

Electronic structure calculations for atomic wire of metals like Al, Ga and In are performed for a patterned dihydrogeneted Si(001):1 $\times$ 1 in search of structures with metallic behavior. The dihydrogeneted Si(001) is patterned by…

材料科学 · 物理学 2009-11-11 Bikash C Gupta , Inder P. Batra
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