相关论文: Dynamic avalanche breakdown of a p-n junction: det…

Tidal disruption events occur when stars are ripped apart by massive black holes, and result in highly luminous, multi-wavelength flares. Optical/UV observations of tidal disruption events (TDEs) contradict simple models of TDE emission,…

We use numerical simulations to study the dynamics of surface discharges, which are common in high-voltage engineering. We simulate positive streamer discharges that propagate towards a dielectric surface, attach to it, and then propagate…

Precisely engineered tunnel junctions exhibit a long sought effect that occurs when the energy of the electron is comparable to the potential energy of the tunneling barrier. The resistance of metal-insulator-metal tunnel junctions…

By the insertion of thin InGaN layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed…

We demonstrated doping in 2D monolayer graphene via local electrical stressing. The doping, confirmed by the resistance-voltage transfer characteristics of the graphene system, is observed to continuously tunable from N-type to P-type as…

We study avalanche dynamics and local activity of forced-flow imbibition fronts in disordered media. We focus on the front dynamics as the mean velocity $\bar{v}$ of the interface is decreased and the pinning state is approached. Scaling…

Strong-field enhanced ionization (EI) is a phenomenon in which stretching of interatomic bonds into a distorted molecular geometry leads to an increase in the tunneling ionization rate driven by a strong field. Isolating the momentum…

We report the discovery of the trigger for detachment bifurcation phenomenon in tokamak divertors, revealed through steady-state and time-dependent UEDGE simulations: The observed electron temperature cliff at the outer target in DIII-D…

We discuss the threshold activated extremal dynamics that is prevalent in the breakdown processes in heterogeneous materials. We model such systems by an elastic spring network with random breaking thresholds assigned to the springs.…

We here propose a model to capture the complexity of the streamer corona adjacent to leader stepping and relate it to the production of energetic electrons serving as a source of X-rays and $\gamma$-rays, manifesting in terrestrial…

A runaway avalanche can result in a conversion of the initial plasma current into a relativistic electron beam in high current tokamak disruptions. We investigate the effect of massive material injection of deuterium-noble gas mixtures on…

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed…

This work reports the design and analysis of an n-type tunneling field effect transistor based on InN. The tunneling current is evaluated from the fundamental principles of quantum mechanical tunneling and semiclassical carrier transport.…

Using a three-dimensional quasiclassical technique we explore molecular double ionization by a linearly polarized, infrared (800~nm) 27~fs laser pulse. For intensities ranging from the tunneling to the over-the-barrier regime, we identify…

We propose the theory of transport in a gate-tunable graphene p-n junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction…

Understanding the formation and long-timescale evolution of atmospheric plasmas produced by ultrashort, long wavelength IR (LWIR) pulses is an important but partially understood problem. Of particular interest are plasmas produced in air…

Designing tunneling junctions with abrupt on-off characteristics and high current densities is critical for many different devices including backward diodes and tunneling field effect transistors (TFETs). It is possible to get a sharp, high…

Optically-pumped color centers in semiconductor powders can potentially induce high levels of nuclear spin polarization in surrounding solids or fluids at or near ambient conditions, but complications stemming from the random orientation of…

We study the lateral tunneling through the gate-voltage-controlled barrier, which arises as a result of partial elimination of the donor layer of a heterostructure along a fine strip using an atomic force microscope, between edge channels…

We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary…