相关论文: Optical Gain from InAs Nanocrystal Quantum Dots in…
The efficient interaction of light with quantum emitters is crucial to most applications in nano and quantum photonics, such as sensing or quantum information processing. Effective excitation and photon extraction are particularly important…
This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical…
We study the electronic coupling between two vertically stacked InAs quantum dots, which are embedded in the center of a n-i-n structure. We use a micro-photoluminescence setup to optically isolate a single quantum dot pair and measure the…
Nanowire heterostructures define high-quality few-electron quantum dots for nanoelectronics, spintronics and quantum information processing. We use a cooled scanning probe microscope (SPM) to image and control an InAs quantum dot in an…
III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving…
We demonstrate a novel method for deterministic charging of InAs quantum dots embedded in photonic crystal nanoresonators using a unique vertical p-n-i-n junction within the photonic crystal membrane. Charging is confirmed by the…
A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…
Semiconductor nanocrystals can be synthesized using inexpensive, scalable, solution-based techniques, and their utility as tunable light emitters has been demonstrated in various applications, including biolabeling and light-emitting…
The authors investigate the spontaneous emission dynamics of self-assembled InGaAs quantum dots embedded in GaAs photonic crystal waveguides. For an ensemble of dots coupled to guided modes in the waveguide we report spatially, spectrally,…
Plasmonic nanoparticles resonantly couple to and confine light below the diffraction limit. This mechanism has enabled a modern renaissance in optical materials, with potential applications ranging from sensing and circuitry to renewable…
Next-generation scalable quantum photonic technologies operating at the single photon level rely on bringing together optimized quantum building blocks with minimal optical coupling losses. Achieving this necessitates the heterogeneous…
We report modifications to the optical properties of fluorophores in the vicinity of noble metal nanotips. The fluorescence from small clusters of quantum dots has been imaged using an apertureless scanning near-field optical microscope.…
Recently, nanomaterials are arousing increasing interest and a wide variety of opto-electronic devices have been developed, such as light-emitting diodes, solar cells, and photodetectors. However, the study of the light emission properties…
Doping a self-assembled InGaAs/GaAs quantum dot (QD) with a single Mn atom, a magnetic acceptor impurity, provides a quantum system with discrete energy levels and original spin-dependent optical selection rules, which thus has large…
The spin states of electrons and holes confined in InAs quantum dot molecules have recently come to fore as a promising system for the storage or manipulation of quantum information. We describe here a feasible scheme for complete quantum…
Magneto-optical absorption by the quantum dot (QD) with impurity center (IC or D(-)-center) complexes synthesized in a transparent dielectric matrix, with consideration of the QD size dispersion, is theoretically studied. Within the…
The size distribution of self-assembled InAs quantum dots grown on (001) InP under the Stranski-Krastanow growth mode is controlled using selective area/chemical beam epitaxy, which allows the formation of quantum dots at specific…
Growth of GaAs and InGaAs nanowires by the group-III assisted Molecular Beam Epitaxy growth method is studied in dependence of growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth was achieved for…
We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a $162.5\,\text{nm}$ thin diode structure. The quantum dots are just $88\,\text{nm}$ from the…
One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3…