相关论文: Optical Gain from InAs Nanocrystal Quantum Dots in…

We present an inverted GaAs 2D electron gas with self-assembled InAs quantum dots in close proximity, with the goal of combining quantum transport with quantum optics experiments. We have grown and characterized several wafers -- using…

We demonstrate the emission of indistinguishable photons along a semiconductor chip originating from carrier recombination in an InAs quantum dot. The emitter is integrated in the waveguiding region of a photonic crystal structure, allowing…

Semiconductor based photonic information technologies are rapidly being pushed to the quantum limit where non-classical states of light can be generated, manipulated and exploited in prototypical quantum optical circuits. Here, we report…

Fiber-coupled single photon sources are essential components of photonics-based quantum information processors. Most fiber-coupled single photon sources require careful alignment between fibers and quantum emitters. In this work, we present…

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime…

In this work, we explore a method for obtaining site-controlled InAs quantum dots (QDs) on large areas of GaAs (0 0 1) pre-patterned surface. The patterning of the substrate is obtained by using a monolithically integrated nano-channel…

We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…

Surface plasmonic effects of metallic particles have been known to be an effective method to improve the performance light emitting didoes. In this work, we reported the sputtered Au nanoparticles enhanced electroluminescence in inverted…

We show how a scanning probe microscope (SPM) can be used to image electron flow through InAs nanowires, elucidating the physics of nanowire devices on a local scale. A charged SPM tip is used as a movable gate. Images of nanowire…

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a…

We show that with a new family of pyramidal site-controlled InGaAsN quantum dots it is possible to obtain areas containing as much as 15% of polarization-entangled photon emitters - a major improvement if compared to the small fraction…

Single crystalline InSb nanosheet is an emerging planar semiconductor material with potential applications in electronics, infrared optoelectronics, spintronics and topological quantum computing. Here we report on realization of a quantum…

We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular-beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only…

InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires,…

InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy and intensity depend on the In amount. The principal…

A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated electronic band structure model are used to ensure accurate…

We present self-assembly of InAs/InAlAs quantum dots by droplet epitaxy technique on vicinal GaAs(111)A substrates. The small miscut angle, while maintaining the symmetries imposed to the quantum dot from the surface, allows fast growth…

We demonstrate the in-plane emission of highly-polarized single photons from an InAs quantum dot embedded into a photonic crystal waveguide. The spontaneous emission rates are Purcell-enhanced by the coupling of the quantum dot to a…

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the…

We demonstrate an electrically tunable two dimensional photonic crystal nanocavity containing InAs self assembled quantum dots. Photoluminescence and electroluminescence measurements are combined to probe the cavity mode structure and…