相关论文: Spectroscopic parameters related to non bridging o…

The optical properties of point defects in as-grown natural silica are reviewed. Two emissions peaked at 4.2 eV ($\alpha_E$ band) and at 3.1 eV ($\beta$ band), related to an absorption band at 5.1 eV ($B_{2\beta}$), have been experimentally…

The photo-luminescence features of Ge-oxygen defect centers in a 100nm thick Ge-doped silica film on a pure silica substrate were investigated by looking at the emission spectra and time decay detected under synchrotron radiation excitation…

We report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the E'-alpha point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in beta-ray irradiated and…

We report nanosecond time-resolved photoluminescence measurements on the isoelectronic series of oxygen deficient centers in amorphous silica, Si-ODC(II), Ge-ODC(II) and Sn-ODC(II) which are responsible of fluorescence activities at $\sim$4…

An optical absorption (OA) band of interstitial dichlorine monoxide molecules with peak at 4.7 eV and halfwidth 0.94 eV is identified in F2 laser - irradiated (photon energy=7.9 eV) synthetic silica glass bearing both interstitial O2 and…

We have fabricated highly-luminescent samples with erbium-doped amorphous silicon sub-oxide (a-SiOx<Er>) layers on SiO2/Si substrates. The layers are designed to provide a resonance with large modal overlap with the active material and with…

We performed broadband optical transmission measurements of Bi2Se3 and In-doped Bi(1-x)In(x)2Se3 thin films, where in the latter the spin-orbit coupling (SOC) strength can be tuned by introducing In. Drude and interband transitions exhibit…

Laboratory measurements of unpolarized and polarized absorption spectra of various samples and crystal stuctures of silicon carbide (SiC) are presented from 1200--35,000 cm$^{-1}$ ($\lambda \sim$ 8--0.28 $\mu$m) and used to improve the…

We propose a realistic model of the optical properties of silver, in which inter-band transition with a threshold energy of ~ 4 eV is described phenomenologically by an ensemble of oscillators with same damping constant and a certain…

Optimizing the photovoltaic efficiency of dye-sensitized solar cells (DSSC) based on staggered gap heterojunctions requires a detailed understanding of sub-band gap transitions in the visible from the dye directly to the substrate's…

We study optical properties of two dimensional silicene using density functional theory based calculations. Our results on optical response property calculations show that they strongly depend on direction of polarization of light, hence…

In hydrogenated amorphous silicon oxide (a-SiO:H) films, incorporation of oxygen enhances optical gap due to a large number of St-O-Si bond formation, which lies deep into valence band states. An induction effect of this Si-O on other bonds…

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…

Optical reflectivity and transmission measurements over photon energies between 0.2 and 1.2 eV were performed on single-crystal graphene samples on a transparent SiO2 substrate. For photon energies above 0.5 eV, graphene yielded a…

Third-order bound-charge electronic nonlinearities of Si nanocrystals (NCs) embedded in a wide band-gap matrix representing silica are theoretically studied using an atomistic pseudopotential approach. Nonlinear refractive index, two-photon…

We studied the optical absorption induced by 4.7eV pulsed laser radiation on Ge-doped a-SiO2 synthesized by a sol-gel technique. The absorption spectra in the ultraviolet spectral range were measured during and after the end of irradiation…

The thiophenoxy radical (C6H5S) is a species of possible astrophysical interest due to an electronic transition in a 5000 A region. The B <-- X electronic transition of this radical in the discharge of thiophenol was measured using a cavity…

We present the anisotropic optical conductivity of MgB$_{2}$ between 0.1 and 3.7 eV at room temperature obtained on single crystals of different purity by the spectroscopic ellipsometry and reflectance measurements. The bare (unscreened)…

We present an analytical investigation of the optical absorption spectrum of monolayer molybdenumdisulfide. Based on the density matrix formalism, our approach gives insights into the microscopic origin of excitonic transitions, their…

The relationship between paramagnetic defect centers and UV absorption bands simultaneously generated by ionizing radiation in Ge-doped SiO2 glass is investigated using magneto-optical techniques. A sample of 7.0 mol% Ge-doped SiO2 was…