相关论文: SET Backaction on the Single Electron Box

We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the…

In mesoscopic and nanoscale systems at low temperatures, charge carriers are typically not in thermal equilibrium with the surrounding lattice. The resulting, non-equilibrium dynamics of electrons has only begun to be explored.…

A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where…

This article is concerned with statistics of addition spectra for systems of identical charged particles. A classical model is suggested in order to study fluctuations of Coulomb blockade peak spacings in large two-dimensional semiconductor…

Starting from the Kubo formula for conductance, we calculate the frequency-dependent response of a single-electron transistor (SET) driven by an ac signal. Treating tunneling processes within the lowest order approximation, valid for a wide…

Usual paradigm in the theory of electron transport is related to the fact that the dielectric permittivity of the insulator is assumed to be constant, no time dispersion. We take into account the "slow" polarization dynamics of the…

Investigations of quantum mechanical effects in macroscopic systems are of great interest to shed light onto the question where and how the transition to the classical world appears. It is also of practical relevance to determine if a bath…

Fluctuation of Coulomb blockade peak spacings in large two-dimensional semiconductor quantum dots are studied within a model based on the electrostatics of several electron islands among which there are random inductive and capacitive…

An analytical analysis of quantum shuttle phenomena in a nanoelectromechanical single-electron transistor has been performed in the realistic case, when the electron tunnelling length is much greater than the amplitude of the zero point…

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

The influence of quantum fluctuations on electron transport through small metallic islands with Coulomb blockade effects is studied beyond the perturbative regime. In tunnel junctions with low resistance higher order coherent processes and…

We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded response with arbitrary relaxation time. We show that in…

Manifestations of quantum coherence in the electronic conductance through nearly closed quantum dots in the Coulomb blockade regime are addressed. We show that quantum coherent tunneling processes explain some puzzling statistical features…

We demonstrate the effect of single-electron tunneling (SET) through a carbon nanotube quantum dot on its nanomechanical motion. We find that the frequency response and the dissipation of the nanoelectromechanical system (NEMS) to SET…

We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact…

We report on low-temperature noise measurements of a single electron transistor (SET) immersed in superfluid $^4$He. The device acts as a charge sensitive electrometer able to detect the fluctuations of charged defects in close proximity to…

The shot noise of the current through a single electron transistor (SET), coupled capacitively with an electronic box, is calculated, using the master equation approach. We show that the noise may be sub-Poissonian or strongly…

We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…

We have incorporated an aluminum single electron transistor (SET) directly on top of a vertical quantum dot, enabling the use of the SET as an electrometer that is extremely responsive to the motion of charge into and out of the dot. Charge…