相关论文: SET Backaction on the Single Electron Box
We calculate the average number of electrons on a metallic single-electron-box as a function of the gate voltage for arbitrary values of the tunneling conductance. In the vicinity of the plateaus the problem is equivalent to calculating the…
We study thermal conductance and thermopower of a metallic single-electron transistor beyond the limit of weak tunnel coupling. Employing both a systematic second-order perturbation expansion and a non-perturbative approximation scheme, we…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
The current revolution in quantum technologies relies on the ability to isolate, coherently control, and measure the state of quantum systems. The act of measurement in quantum mechanics, however, is naturally invasive as the measurement…
Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology…
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find…
Coulomb blockade phenomena and quantum fluctuations are studied in mesoscopic metallic tunnel junctions with high charging energies. If the resistance of the barriers is large compared to the quantum resistance, transport can be described…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
We derive an $n$-resolved Master equation for quantum transport that includes a dependence on the number $n$ of tunneled electrons in system parameters such as tunnel rates and energy levels. We apply the formalism to describe dynamical…
A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…
Quantum fluctuations of the charge in the single electron box are investigated. Based on a diagrammatic expansion we calculate the average island charge number and the effective charging energy in third order in the tunneling conductance.…
We present an experimental realization of a Coulomb blockade refrigerator (CBR) based on a single - electron transistor (SET). In the present structure, the SET island is interrupted by a superconducting inclusion to permit charge transport…
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel…
We investigate the Coulomb blockade in quantum dots asymmetrically coupled to the leads for an arbitrary voltage bias focusing on the regime where electrons do not thermalise during their dwell time in the dot. By solving the quantum…
We investigate the total spin in an individual single-wall carbon nanotube quantum dot with various numbers of electrons in a shell by using the ratio of the saturation currents of the first steps of Coulomb staircases for positive and…
We describe two experiments to study the influence of fluctuations in the electron charge on the transport properties of a quantum dot. First, we scan a device from single- to double quantum-dot behavior by varying the conductance of a…
Interplay of cotunneling and single-electron tunneling in a thermally isolated single-electron transistor (SET) leads to peculiar overheating effects. In particular, there is an interesting crossover interval where the competition between…
Experiments on the direction-resolved full-counting statistics of single-electron tunneling allow testing the fundamentally important Fluctuation Theorem (FT). At the same time, the FT provides a frame for analyzing such data. Here we…
We show that nonequilibrium spin fluctuations significantly influence the electronic transport in a single-electron transistor, when the spin relaxation on the island is slow compared to other relaxation processes, and when size effects…
Measuring a quantum system can randomly perturb its state. The strength and nature of this back-action depends on the quantity which is measured. In a partial measurement performed by an ideal apparatus, quantum physics predicts that the…