相关论文: Total Angular Momentum Conservation During Tunnell…
We investigate the transport of holes through $AlAs/In_{.10}Ga_{.90}As$ resonant tunneling diodes which utilize $In_xGa_{1-x}As$ prewells in the emitter with $x=0,.10,$ and $.20$. The data show an increase in peak current and bias at…
We report tunneling phenomena in double In$_{0.53}$Ga$_{0.47}$As quantum-well structures that are at odds with the conventional parallel-momentum-conserving picture of tunneling between two-dimensional systems. We found that the tunneling…
Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a step-like behavior in…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
A study of magneto-transport through quantum dots is presented. The model allows to analyze tunnelling both from bulk-like contacts and from 2D accumulation layers. The fine features in the I-V characteristics due to the quantum dot states…
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…
Tunnelling conductances observed for mesoscopic Kondo systems exhibit a zero-bias peak and two coherent side peaks. The former peak is usually understood as a Kondo effect and the latter side peak is recently clarified as the effect of…
The persistent current for a one-dimensional ring with two tunnel barriers is considered in the limit of weakly interacting electrons. In addition to a small off-resonance current, there are two kinds of resonant behavior; (i) a current…
Exploring the electron tunneling mechanisms in diverse materials systems constitutes a versatile strategy for tailoring the properties of optoelectronic devices. In this domain, bipolar vertical tunneling junctions composed of van der Waals…
It is shown that in a structure consisting of a superconducting ring-shaped electrode overlapped by a normal metal contact through a thin oxide barrier, measurements of the tunnel current in magnetic field can probe persistent currents in…
We have analyzed the tunneling transmission probability and electronic current density through resonant heterostructures in the presence of an external electromagnetic field. In this work, we compare two different models for a double…
We study resonant tunneling through a superconducting double barrier structure in graphene as a function of the system parameters. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a…
We investigate electronic transport through II-VI semiconductor resonant tunneling structures containing diluted magnetic impurities. Due to the exchange interaction between the conduction electrons and the impurities, there arises a giant…
We study resonant transport through a superconducting double barrier structure. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a hole (Andreev reflection). Similarly, transport across…
The edge of a two-dimensional electron system (2DES) in a magnetic field consists of one-dimensional (1D) edge-channels that arise from the confining electric field at the edge of the specimen$^{1-3}$. The crossed electric and magnetic…
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE.…
Experimental and theoretical studies on transport in semiconductor samples with superconducting electrodes are reported. We focus on the samples close to metal-insulator transition. In metallic samples, a peak of negative magnetoresistance…
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar…
A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent…
Work is devoted to physics of current transport in a wide class of the hetero-phase granulated mediums and similar systems with set of metal or semi-conductor granules, quantum dots or potential wells in which the exit from Coulomb blockade…