相关论文: High Performance N-Type Carbon Nanotube Field Effe…

We performed a comprehensive scaling study of Schottky barrier carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to Schottky barrier carbon nanotube FETs whose metal source/drain is…

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain…

The interaction of double wall carbon nanotubes (DWCNTs) and the conducting polymer poly(3,4-ethylenedioxythiphene/polystyrenesulfonate (PEDOT/PSS) was studied by in-situ Raman spectroelectrochemistry. The mixing of DWCNTs with PEDOT/PSS…

This paper is the first one of a series of two articles in which we revisit the optical properties of single-walled carbon nanotubes (SWNT). Produced by rolling up a graphene sheet, SWNT owe their intriguing properties to their cylindrical…

We have measured shot noise in single walled carbon nanotubes (SWNT) with good contacts at 4.2 K at low frequencies ($f=600 - 850$ MHz). We find a strong modulation of shot noise over the Fabry-Perot pattern; in terms of differential Fano…

A boost in the development of flexible and wearable electronics facilitates the design of new materials to be applied as transparent conducting films (TCFs). Although single-walled carbon nanotube (SWCNT) films are the most promising…

We report on electrical Raman measurements in transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external electric field results in downshifts of the D and G modes and in reduction of their intensity.…

The influence of defects on electron transport in single-wall carbon nanotube field effect transistors (CNFETs) is probed by combined scanning gate microscopy (SGM) and scanning impedance microscopy (SIM). SGM reveals a localized field…

Employing strong electrostatic gating (liquid-ion gating), the position of the Fermi energy E_F (relative to the charge-neutrality point) was determined in multi-wall carbon nanotubes (MWNTs). E_F is negative (hole doping) and amounts to…

We will study the competitive effect between the transport of a quantum dot adsorbed to a ballistic channel and laterally coupled to a single-walled carbon nanotube (SWNT). We will use the tight-binding approach to analytically write the…

The conductivity of carbon nanotube (CNT) networks can be improved markedly by doping with nitric acid. In the present work, CNTs and junctions of CNTs functionalized with NO$_3$ molecules are investigated to understand the microscopic…

To construct reliable material platforms and to uncover new rules to realize spin-Seebeck effect (SSE) and thermal spin-filtering effect (SFE) are core topics in spin caloritronics. Here we design several single-layer boron-nitrogen…

In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very…

In this paper, we have analysed the electronic and mechanical properties of Nitrogen(N) doped (6,1) SWCNTs based on first-principles and Molecular dynamic (MD) simulation. A schematic N-doping on SWCNT was performed along zigzag(zz) and…

In this article, we present a configurable field-effect transistor (FET), where not only polarity (n- and p-type), but the conduction mechanism of a FET can also be configured dynamically. As a result, we can have both types of devices,…

We present quantum simulations of carbon nanotube field-effect transistors (CNT-FETs) based on top-gated architectures and compare to electrical characterization on devices with 15 nm channel lengths. A non-equilibrium Green's function…

Carbon nanotube (CNT) based electronic devices are promising for beyond-silicon solid-state electronics and vacuum micro-nano-electronics. Despite rapid progress in CNT field-effect transistor related solid-state electronics, the…

Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic…

We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position…

Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attracting increasing attention in the last decades due to their inherent scaling properties, which become fundamental to sustain the scaling in…