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相关论文: High Performance N-Type Carbon Nanotube Field Effe…

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A new non-ballistic analytical model for the intrinsic channel region of MOSFET-like single-walled carbon-nanotube field-effect transistors with ohmic contacts has been developed which overcomes the limitations of existing models and…

介观与纳米尺度物理 · 物理学 2016-03-01 Igor Bejenari , Martin Claus

Thermoelectric power (TEP) of individual single walled carbon nanotubes (SWNTs) has been measured at mesoscopic scales using a microfabricated heater and thermometers. Gate electric field dependent TEP-modulation has been observed. The…

介观与纳米尺度物理 · 物理学 2009-11-10 Joshua P. Small , Kerstin M. Perez , Philip Kim

We report on the experimental demonstration and electrical characterization of N = 7 armchair graphene nanoribbon (7-AGNR) field effect transistors. The back-gated transistors are fabricated from atomically precise and highly aligned…

介观与纳米尺度物理 · 物理学 2018-03-21 Vikram Passi , Amit Gahoi , Boris V. Senkovskiy , Danny Haberer , Felix R. Fischer , Alexander Grüneis , Max C. Lemme

Inspired by the striking similarities between the metal-insulator transitions in graphite and Si-MOSFET's and the recent attention to charge doping in carbon-based materials, we have made attempts to fabricate a field-effect transistor…

强关联电子 · 物理学 2007-05-23 H. Kempa , P. Esquinazi

Carbon nanotubes (CNT) have a very large application potential in the rapid developing field of molecular electronics. Infinite single-wall metallic CNTs have theoretically a conductance of 4e2/h because of the two electronic bands crossing…

介观与纳米尺度物理 · 物理学 2007-05-23 N. Ranjan , R. Gutierrez-Laliga , S. Krompiewski , G. Cuniberti

We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the…

介观与纳米尺度物理 · 物理学 2019-01-02 Felix J. Schupp , Muhammad M. Mirza , Donald A. MacLaren , G. Andrew D. Briggs , Douglas J. Paul , Jan A. Mol

We report an improved photosensitivity in few-layer tin disulfide (SnS2) field-effect transistors (FETs) following doping with CdSe/ZnS core/shell quantum dots (QDs). The hybrid QD-SnS2 FET devices achieve more than 500 percent increase in…

介观与纳米尺度物理 · 物理学 2016-04-20 Yuan Huang , Huidong Zang , Jia-Shiang Chen , Eli A. Sutter , Peter W. Sutter , Chang-Yong Nam , Mircea Cotlet

We present a general approach to the computational design of nanostructured chemical sensors. The scheme is based on identification and calculation of microscopic descriptors (design parameters) which are used as input to a thermodynamic…

The thermal conductivity, k(T), of bulk single-wall carbon nanotubes (SWNT's) displays a linear temperature dependence at low T that has been attributed to 1D quantization of phonons. To explore this issue further, we have measured the k(T)…

材料科学 · 物理学 2016-08-31 M. C. Llaguno , J. Hone , A. T. Johnson , J. E. Fischer

The remarkable electrical and optical properties or single-walled carbon nanotubes (SWNT) allowed for engineering device prototypes showing great potential for applications such as photodectors and solar cells. However, any path towards…

介观与纳米尺度物理 · 物理学 2014-10-29 Gilles Buchs , Salvatore Bagiante , Gary A. Steele

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of…

介观与纳米尺度物理 · 物理学 2015-06-11 Narae Kang , Biddut K. Sarker , Saiful I. Khondaker

We have performed experiments on single-wall carbon nanotube (SWNT) networks and compared with density-functional theory (DFT) calculations to identify the microscopic origin of the observed sensitivity of the network conductivity to…

介观与纳米尺度物理 · 物理学 2010-01-15 D. J. Mowbray , C. Morgan , K. S. Thygesen

The field emission properties of ion irradiated multiwalled carbon nanotubes (MWCNTs) and doublewalled carbon nanotubes (DWCNTs) have been studied. The carbon nanotubes synthesized by a chemical vapor deposition method were irradiated by…

材料科学 · 物理学 2014-04-28 P. M. Koinkar , A. Kumar , D. K. Avasthi , M. A. More , Ri-ichi Murakami

Single walled carbon nanotubes with Pd ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean free path (mfp) for acoustic phonon scattering is estimated…

介观与纳米尺度物理 · 物理学 2009-11-10 Ali Javey , Jing Guo , Magnus Paulsson , Qian Wang , David Mann , Mark Lundstrom , Hongjie Dai

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope…

This review covers recent achievements in the studies of quantum properties of the novel carbon materials (fullerite C60 and bundles of single-walled nanotubes (SWNT)) saturated with such light-mass species as helium isotopes, the…

材料科学 · 物理学 2013-03-27 M. A. Strzhemechny , A. V. Dolbin

The capabilities of the mechanical resonator-based nanosensors in detecting ultra-small mass or force shifts have driven a continuing exploration of the palette of nanomaterials for such application purpose. Based on large-scale molecular…

材料科学 · 物理学 2015-06-25 Haifei Zhan , Guiyong Zhang , Baocheng Zhang , John M. Bell , Yuantong Gu

We present a first-principles study of semiconducting carbon nanotubes adsorbed on the unpassivated Si(100) surface. We have found metallicity for the combined system caused by n-doping of the silicon slab representing the surface by the…

材料科学 · 物理学 2007-05-23 Salvador Barraza-Lopez , Peter M. Albrecht , Nichols A. Romero , Karl Hess

Sub-10nm wide graphene nanoribbon field-effect transistors (GNRFETs) are studied systematically. All sub-10nm GNRs afforded semiconducting FETs without exception, with Ion/Ioff ratio up to 10^6 and on-state current density as high as…

介观与纳米尺度物理 · 物理学 2009-11-13 Xinran Wang , Yijian Ouyang , Xiaolin Li , Hailiang Wang , Jing Guo , Hongjie Dai

We discuss magnetotransport measurements on individual single-wall carbon nanotubes with low contact resistance, performed as a function of temperature and gate voltage. We find that the application of a magnetic field perpendicular to the…

介观与纳米尺度物理 · 物理学 2007-05-23 H. T. Man , A. F. Morpurgo