中文
相关论文

相关论文: Electrical Spin Injection in Multi-Wall carbon Nan…

200 篇论文

We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy…

介观与纳米尺度物理 · 物理学 2009-11-07 F. J. Jedema , M. S. Nijboer , A. T. Filip , B. J. van Wees

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…

材料科学 · 物理学 2013-12-06 C. I. L. de Araujo , M. A. Tumelero , A. D. C. Viegas , N. Garcia , A. A. Pasa

Electrical injection of spin-polarized electrons into a semiconductor, large spin diffusion length, and an integration friendly platform are desirable ingredients for spin-based devices. Here we demonstrate lateral spin injection and…

介观与纳米尺度物理 · 物理学 2010-09-14 En-Shao Liu , Junghyo Nah , Kamran M. Varahramyan , Emanuel Tutuc

We demonstrate spin injection and detection in single wall carbon nanotubes using a 4-terminal, non-local geometry. This measurement geometry completely separates the charge and spin circuits. Hence all spurious magnetoresistance effects…

介观与纳米尺度物理 · 物理学 2011-05-05 N. Tombros , S. J. van der Molen , B. J. van Wees

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable…

材料科学 · 物理学 2009-11-07 V. F. Motsnyi , V. I. Safarov , J. De Boeck , J. Das , W. Van Roy , E. Goovaerts , G. Borghs

In a recent publication, we demonstrated electrical spin injection and detection in n-type silicon at temperatures up to 500K using ferromagnetic metal / SiO2 tunnel barrier contacts in a three-terminal geometry (Nature Commun. 2:245…

材料科学 · 物理学 2019-06-19 C. H. Li , O. M. J. van 't Erve , B. T. Jonker

We study the electrical injection and detection of spin currents in a lateral spin valve device, using permalloy (Py) as ferromagnetic injecting and detecting electrodes and copper (Cu) as non-magnetic metal. Our multi-terminal geometry…

介观与纳米尺度物理 · 物理学 2007-05-23 F. J. Jedema , M. S. Nijboer , A. T. Filip , B. J. van Wees

We report the experimental observation of spin-induced magnetoresistance in single-wall carbon nanotubes contacted with high-transparency ferromagnetic electrodes. In the linear regime the spin-induced magnetoresistance oscillates with gate…

介观与纳米尺度物理 · 物理学 2007-05-23 H. T. Man , I. J. W. Wever , A. F. Morpurgo

Slow magnetic relaxation and two level fluctuations measurements under high current injection is performed in single-contacted ferromagnetic nanostructures. The magnetic configurations of the samples are described by two metastable states…

介观与纳米尺度物理 · 物理学 2009-11-10 J. -E. Wegrowe

The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…

介观与纳米尺度物理 · 物理学 2009-09-25 C. J. Hill , X. Cartoixa , R. A. Beach , D. L. Smith , T. C. McGill

We have measured the transport properties of Ferromagnet - Superconductor nanostructures, where two superconducting aluminum (Al) electrodes are connected through two ferromagnetic iron (Fe) ellipsoids in parallel. We find that, below the…

We have calculated the spin-polarization effects of a current in a two dimensional electron gas which is contacted by two ferromagnetic metals. In the purely diffusive regime, the current may indeed be spin-polarized. However, for a typical…

介观与纳米尺度物理 · 物理学 2009-10-31 G. Schmidt , L. W. Molenkamp , A. T. Filip , B. J. van Wees

Hysteretic switching in the magnetoresistance of short-channel, ferromagnetically contacted individual single wall carbon nanotubes is observed, providing strong evidence for nanotube spin transport. By varying the voltage on a capacitively…

介观与纳米尺度物理 · 物理学 2016-08-31 Bhaskar Nagabhirava , Tanesh Bansal , Gamini Sumanasekera , Lei Liu , Bruce W. Alphenaar

Electrical spin injection from the Heusler alloy Co_2MnGe into a p-i-n Al_0.1Ga_0.9As/GaAs light emitting diode is demonstrated. A maximum steady-state spin polarization of approximately 13% at 2 K is measured in two types of…

We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flipping of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique…

材料科学 · 物理学 2015-05-14 B. Dassonneville , R. Acharyya , H. Y. T. Nguyen , R. Loloee , W. P. Pratt , J. Bass

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…

介观与纳米尺度物理 · 物理学 2009-11-10 C. Ruester , T. Borzenko , C. Gould , G. Schmidt , L. W. Molenkamp , X. Liu , T. J. Wojtowicz , J. K. Furdyna , Z. G. Yu , M. E. Flatte

We have fabricated nanometer sized magnetic tunnel junctions using a new nanoindentation technique in order to study the transport properties of a single metallic nanoparticle. Coulomb blockade effects show clear evidence for single…

We have performed non-local spin injection into a nano-scale ferromagnetic particle configured in a lateral spin valve structure to switch its magnetization only by spin current. The non-local spin injection aligns the magnetization of the…

材料科学 · 物理学 2007-05-23 T. Kimura , Y. Otani , J. Hamrle

A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by…

介观与纳米尺度物理 · 物理学 2009-11-07 D. K. Young , E. Johnston-Halperin , D. D. Awschalom , Y. Ohno , H. Ohno

We have reconsidered the problem of spin injection across ferromagnet/non-magnetic-semiconductor (FM/NMS) and dilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, for structures with \textit{finite} magnetic layers (FM or…

介观与纳米尺度物理 · 物理学 2009-11-10 Alexander Khaetskii , J. Carlos Egues , Daniel Loss , Charles Gould , Georg Schmidt , Laurens W. Molenkamp
‹ 上一页 1 2 3 10 下一页 ›