相关论文: Bias voltage controlled magnetization switch in fe…
We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and…
A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in…
We present a semi-analytic theory for the Curie temperature in diluted magnetic semi-conductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings…
The conditions for the occurrence of pronounced magnetoelectric bistabilities in the resonant tunneling through a ferromagnetic quantum well are theoretically investigated. The bistability appears due to the mutual feedback of the carriers…
We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an…
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observed at room temperature. The polarity reversal of TMR occurs…
We propose a ferromagnetic/ferroelectric hybrid double quantum well structure, and present an investigation of the Curie temperature (Tc) modulation in this quantum structure. The combined effects of applied electric fields and spontaneous…
A mesoscopic spin valve is used to determine the effective spin polarization of electrons tunneling from and into ferromagnetic transition metals at finite voltages. The tunneling spin polarization from the ferromagnet (FM) slowly decreases…
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The…
Prediction of the Curie temperature is of significant importance for the design of ferromagnetic materials. Even though the Curie temperature has been estimated using the Heisenberg model, magnetic exchange coupling parameters widely used…
We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the blocking temperature of the antiferromagnet (T_B = 48 +- 2 K)…
We show that the critical temperature of a ferromagnetic phase transition in a quasi-two-dimensional hole gas confined in a diluted magnetic semiconductor quantum well strongly depends on the hole chemical potential and hole density. The…
Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…
We analyze the heat current traversing a quantum dot sandwiched between a ferromagnetic and a superconducting electrode. The heat flow generated in response to a voltage bias presents rectification as a function of the gate potential…
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy…
We predict that a novel bias-voltage assisted magnetization reversal process will occur in Mn doped II-VI semiconductor quantum wells or heterojunctions with carrier induced ferromagnetism. The effect is due to strong exchange-coupling…
Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show…
We present a theoretical survey of ferromagnetic transition temperatures in cubic (III,Mn)V semiconductors based on a model with $S=5/2$ local moments exchange-coupled to itinerant holes in the host semiconductor valence band. Starting from…
We present a quantitative theory for the effects of correlated doping on the ferromagnetism of diluted magnetic semiconductors. It predicts that room temperature ferromagnetism should be possible in homogeneous, but correlated, samples of…
We propose a ferromagnetic spintronic system, which consists of two serial connected resonant tunneling diodes. One diode is nonmagnetic whereas the other comprises a ferromagnetic emitter and quantum well. Using a selfconsistent coherent…