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相关论文: Strongly correlated multilayered nanostructures ne…

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Dynamical mean field theory is employed to calculate the properties of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers coupled via barrier planes that are made from a strongly correlated material (and can…

强关联电子 · 物理学 2009-11-10 J. K. Freericks

We calculate the junction resistance for a metal-barrier-metal device with the barrier tuned to lie just on the insulating side of the metal-insulator transition. We find that the crossover from tunneling behavior in thin barriers at low…

强关联电子 · 物理学 2009-11-10 J. K. Freericks

Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material…

强关联电子 · 物理学 2009-11-11 Ling Chen , J. K. Freericks

Thermal and many-body localized phases are separated by a dynamical phase transition of a new kind. We analyze the distribution of off-diagonal matrix elements of local operators across the many-body localization transition (MBLT) in a…

无序系统与神经网络 · 物理学 2017-09-13 Maksym Serbyn , Z. Papić , Dmitry A. Abanin

Metallic states near the Mott insulator show a variety of quantum phases including various magnetic, charge ordered states and high-temperature superconductivity in various transition metal oxides and organic solids. The emergence of a…

强关联电子 · 物理学 2023-12-05 Kensaku Takai , Youhei Yamaji , Fakher F. Assaad , Masatoshi Imada

Recent work by Kopp and Mannhart on novel electronic systems formed at oxide interfaces has shown interesting effects on the capacitances of these devices. We employ inhomogeneous dynamical mean-field theory to calculate the capacitance of…

强关联电子 · 物理学 2013-05-30 S. T. F. Hale , J. K. Freericks

Quantum tunneling dominates coherent transport at low temperatures in many systems of great interest. In this work we report a many--body tunneling (MBT), by nonperturbatively solving the Anderson multi-impurity model, and identify it a…

介观与纳米尺度物理 · 物理学 2017-01-24 WenJie Hou , YuanDong Wang , JianHua Wei , ZhenGang Zhu , YiJing Yan

The notion of Thouless energy plays a central role in the theory of Anderson localization. We investigate the scaling of Thouless energy across the many-body localization (MBL) transition in a Floquet model. We use a combination of methods…

无序系统与神经网络 · 物理学 2021-09-01 Michael Sonner , Maksym Serbyn , Zlatko Papić , Dmitry A. Abanin

Recent experiments on mesoscopic normal-metal--superconductor heterostructures resolve properties on length scales and at low temperatures such that the temperature is below the Thouless energy $k_B T \le E_{Th}$. We describe the properties…

介观与纳米尺度物理 · 物理学 2009-10-31 Wolfgang Belzig , Frank K. Wilhelm , Christoph Bruder , Gerd Schön , Andrei D. Zaikin

The possibility of the strong electron-electron interaction driven insulating phase from the metallic phase in two-dimensions has been suggested for clean systems without intentional disorder, but its rigorous demonstration is still…

强关联电子 · 物理学 2021-01-04 Byoung Hee Moon , Gang Hee Han , Miloš M. Radonjić , Hyunjin Ji , Vladimir Dobrosavljević

The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…

强关联电子 · 物理学 2009-11-07 Y. Ohashi , Y. Ono

Mottness is at the heart of the essential physics in a strongly correlated system as many novel quantum phenomena occur in the metallic phase near the Mott metal-insulator transition. We investigate the Mott transition in a Hubbard model by…

强关联电子 · 物理学 2023-11-29 Yuekun Niu , Yu Ni , Jianli Wang , Leiming Chen , Ye Xing , Yun Song , Shiping Feng

We use the dynamical mean field method to investigate electronic properties of heterostructures in which finite number of Mott-insulator layers are embedded in a spatially infinite band-insulator. The evolution of the correlation effects…

强关联电子 · 物理学 2009-11-10 Satoshi Okamoto , Andrew J. Millis

This article summarizes recent work on the many-body (beyond density functional theory) electronic structure of layered rare-earth nickelates, both in the context of the materials themselves and in comparison to the high-temperature…

强关联电子 · 物理学 2022-02-03 Hanghui Chen , Alexander Hampel , Jonathan Karp , Frank Lechermann , Andrew Millis

We analyze the highly non-perturbative regime surrounding the Mott-Hubbard metal-to-insulator transition (MIT) by means of dynamical mean field theory calculations at the two-particle level. By extending the results of Sch\"afer, et al.…

We thoroughly analyze the divergences of the irreducible vertex functions occurring in the charge channel of the half-filled Hubbard model in close proximity to the Mott metal-insulator transition (MIT). In particular, by systematically…

强关联电子 · 物理学 2023-11-21 Mathias Pelz , Severino Adler , Matthias Reitner , Alessandro Toschi

Understanding the interplay of interactions and disorder in quantum transport poses long-standing scientific challenges, with many-body quantum transport phenomena in high-dimensional disordered systems remaining largely unexplored…

We present a theory for charge and heat transport parallel to the interfaces of a multilayer (ML) in which the interfacing gives rise the redistribution of the electronic charges. The ensuing electrical field couples self-consistently to…

强关联电子 · 物理学 2018-01-03 Veljko Zlatić , J. K. Freericks

We investigate the thermoelectric response of correlated electron systems near the density driven Mott transition using the dynamical mean field theory.

强关联电子 · 物理学 2009-10-31 Gunnar Palsson , Gabriel Kotliar

The experimentally established phase diagram of the half-filled Hubbard model features the existence of three distinct finite-temperature regimes, separated by extended crossover regions. A number of crossover lines can be defined to span…

强关联电子 · 物理学 2013-08-29 J. Vucicevic , H. Terletska , D. Tanaskovic , V. Dobrosavljevic
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