相关论文: Hysteresis in the quantum Hall regimes in electron…

We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…

The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…

We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance…

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry (PHS) of the FQHE states about half-filling in the lowest Landau level. The…

The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…

The quantum Hall conductance of a disordered two-dimensional gas of non-interacting electrons is re-examined for its integrity against disorder in the limit of no mixing between different Landau levels. The exact one-electron eigenstates of…

We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…

Quantum annealing leverages quantum tunneling for non-local searches, thereby minimizing memory effects that typically arise from metastabilities. Nonetheless, recent work has demonstrated robust hysteresis in large-scale transverse-field…

The fractional quantum Hall effect (FQHE), observed in two-dimensional (2D) charged particles at high magnetic fields, is one of the most fascinating, macroscopic manifestations of a many-body state stabilized by the strong Coulomb…

The article shows a simple model that computes the magnetoconduction and the integer quantum Hall effect (IQHE) in a two-dimensional electron system (2DES) where the spin is other degree of freedom in the system. The 2DES is confined in a…

Up to know all the experimental results concerning the integer and fractional quantum Hall effect are related to semiconductor heterostructures (and more recently with graphene). The common characteristic of all these systems is the…

Landau level bending near the edge of graphene, described using 2d Dirac equation, provides a microscopic framework for understanding the quantum Hall Effect (QHE) in this material. We review properties of the QHE edge states in graphene,…

The intriguing re-entrant integer quantized Hall states recently discovered in high Landau levels of high-mobility 2D electron systems are found to exhibit extremely non-linear transport. At small currents these states reflect insulating…

We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling \nu =1 as a…

We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…

The high-frequency conductivity of Si delta-doped GaAs/AlGaAs heterostructures is studied in the integer quantum Hall effect (QHE) regime, using acoustic methods. Both the real and the imaginary parts of the complex conductivity are…

We report on transport in the second Landau level in \emph{in-situ} back-gated two-dimensional electron gases in GaAs/Al$_x$Ga$_{1-x}$As quantum wells. Minimization of gate leakage is the primary heterostructure design consideration.…

Magnetoresistance measurements have been performed on a gated two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear features of the quantum Hall effect were…

We report on results of systematic numerical studies of two-dimensional electron gas systems subject to a perpendicular magnetic field, with a high Landau level partially filled by electrons. Our results are strongly suggestive of a…

The effect of a one-dimensional periodic electrostatic modulation on quantum Hall systems with filling factor \nu=1 is studied. We propose that, either when the amplitude of the modulation potential or the tilt angle of the magnetic field…