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相关论文: Universality and Critical Behavior at the Mott tra…

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We consider the two-terminal conductance of a one-dimensional Mott insulator undergoing the commensurate-incommensurate quantum phase transition to a conducting state. We treat the leads as Luttinger liquids. At a specific value of…

介观与纳米尺度物理 · 物理学 2008-01-23 M. Garst , D. S. Novikov , Ady Stern , L. I. Glazman

The phase diagram of BaVS3 is studied under pressure using resistivity measurements. The temperature of the metal to nonmagnetic Mott insulator transition decreases under pressure, and vanishes at the quantum critical point p_cr=20kbar. We…

强关联电子 · 物理学 2009-10-31 L. Forro , R. Gaal , H. Berger , P. Fazekas , K. Penc , I. Kezsmarki , G. Mihaly

We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…

强关联电子 · 物理学 2017-06-13 Kaveh Ahadi , Susanne Stemmera

In an attempt to understand quantitatively the remarkable discoveries of metal-insulator transitions in two-dimensional systems, we generalize Mott's variable range hopping theory to the situation with strong Coulomb interaction. In our…

强关联电子 · 物理学 2007-05-23 Wenjun Zheng , Yue Yu

In this overview we provide a general introduction to metal-insulator transitions, with focus on specific mechanisms that can localize the electrons in absence of magnetic or charge ordering, and produce well defined quantum critical…

强关联电子 · 物理学 2011-12-30 V. Dobrosavljevic

We consider the critical behavior at an interface which separates two semi-infinite subsystems belonging to different universality classes, thus having different set of critical exponents, but having a common transition temperature. We…

统计力学 · 物理学 2007-05-23 F. A. Bagamery , L. Turban , F. Igloi

Recent studies of electrical transport, both theoretical and experimental, near the bandwidth-tuned Mott metal-insulator transition have uncovered apparent quantum critical scaling of the electrical resistivity at elevated temperatures,…

强关联电子 · 物理学 2019-11-06 Heike Eisenlohr , Seung-Sup B. Lee , Matthias Vojta

Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the…

强关联电子 · 物理学 2015-06-26 J. Vucicevic , D. Tanaskovic , M. Rozenberg , V. Dobrosavljevic

We performed nuclear-magnetic-resonance (NMR) measurements on itinerant-electron metamagnet UCoAl in order to investigate the critical behavior of the magnetism near a metamagnetic (MM) critical endpoint (CEP). We derived c-axis…

强关联电子 · 物理学 2015-06-05 K. Karube , T. Hattori , S. Kitagawa , K. Ishida , N. Kimura , T. Komatsubara

We have performed sound velocity measurements in (V$_{1-x}$Cr$_x$)$_2$O$_3$ in the vicinity of the critical point of the first order Mott transition line. The pressure sweeps at constant temperature reveal a large dip in the $c_{33}$…

强关联电子 · 物理学 2013-05-29 S. Populoh , P. Wzietek , R. Gohier , P. Metcalf

Phenomenological theory of the Mott transition is presented. When the critical temperature of the Mott transition is much higher than the quantum degeneracy temperature, the transition is essentially described by the Ising universality…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada

The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott…

While the phase diagrams of the one- and multi-orbital Hubbard model have been well studied, the physics of real Mott insulators is often much richer, material dependent, and poorly understood. In the prototype Mott insulator…

强关联电子 · 物理学 2018-09-06 Frank Lechermann , Noam Bernstein , I. I. Mazin , Roser Valentí

To provide an understanding of the universal properties emerging from the empirical correlations and phase diagrams of cuprate superconductors, we invoke the scaling theory of finite temperature and quantum critical phenomena. The universal…

超导电性 · 物理学 2009-11-07 T. Schneider

We report the pressure study of a doped organic superconductor with Hall coefficient and conductivity measurements. We find that maximally enhanced superconductivity and a non-Fermi liquid appear around a certain pressure where mobile…

材料科学 · 物理学 2025-01-07 H. Oike , K. Miyagawa , H. Taniguchi , K. Kanoda

Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transitions emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical…

强关联电子 · 物理学 2007-05-23 Takahiro Misawa , Youhei Yamaji , Masatoshi Imada

We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…

强关联电子 · 物理学 2021-02-19 Gia-Wei Chern

We discuss the universal transport signatures near a zero-temperature continuous Mott transition between a Fermi liquid (FL) and a quantum spin liquid in two spatial dimensions. The correlation-driven transition occurs at fixed filling and…

强关联电子 · 物理学 2015-03-20 William Witczak-Krempa , Pouyan Ghaemi , T. Senthil , Yong Baek Kim

The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…

强关联电子 · 物理学 2025-10-20 Ankur Majumder , Sudeshna Sen

For continuous Mott metal-insulator transitions in layered two dimensional systems, we demonstrate the phenomenon of dimensional decoupling: the system behaves as a three-dimensional metal in the Fermi liquid side but as a stack of…

强关联电子 · 物理学 2016-09-08 Liujun Zou , T. Senthil